IS45S32400E-7BLA1-TR

The IS45S32400E-7BLA1-TR from ISSI is a 128Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture. It delivers fully synchronous, pipeline-based memory access with a parallel LVTTL interface for systems requiring predictable clocked operation.

Designed for 3.0–3.6 V systems and specified for an operating range of −40°C to 85°C, this device targets embedded and industrial memory applications that require programmable burst modes, selectable CAS latency, and standard refresh management.

Key Features

• Core Architecture  Fully synchronous operation with all signals referenced to the positive clock edge; internal bank structure to hide row access/precharge and support pipelined transfers.
• Memory Organization  128 Mbit capacity formatted as 4M × 32 across 4 internal banks, providing wide 32-bit data paths per access.
• Performance  Device variant supports a 143 MHz clock frequency (–7 speed grade) with CAS latency options of 2 or 3 and an access time of 5.4 ns (CAS latency = 3).
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) to match system transfer patterns.
• Refresh and Self-Management  Auto-refresh and self-refresh support with refresh rates per grade (4K refresh cycles per 16 ms or 64 ms depending on grade) to maintain data integrity.
• Interface and Signaling  Parallel memory interface with LVTTL signaling conventions for command, address, and data lines.
• Power  Single-supply operation within 3.0 V to 3.6 V range for standard 3.3 V memory systems.
• Package and Thermal  Supplied in a 90-ball TF-BGA (8 × 13) package and rated for an operating ambient temperature range of −40°C to +85°C (TA).

Unique Advantages

• Deterministic synchronous timing: All signals referenced to the clock edge simplifies timing analysis and integration into clocked memory subsystems.
• Flexible burst control: Programmable burst lengths and sequences enable optimization for sequential or random-access transfer patterns.
• Selectable CAS latency: CAS latency options (2 or 3) allow tuning of read latency versus clock rate for system-level performance trade-offs.
• Quad-bank organization: Internal bank architecture supports hidden row operations to reduce access overhead during bank switching.
• Industry temperature range: Specified operation from −40°C to 85°C supports deployment in a wide range of ambient conditions.
• Compact BGA package: 90‑ball TF‑BGA (8×13) offers a small PCB footprint for space-constrained designs.

Why Choose IS45S32400E-7BLA1-TR?

The IS45S32400E-7BLA1-TR provides a compact, synchronous 128 Mbit DRAM solution with configurable burst behavior and selectable CAS latency to fit a variety of performance and timing requirements. Its 3.0–3.6 V single-supply operation, LVTTL interface, and quad-bank architecture make it suitable for embedded and industrial designs that need predictable, high-speed parallel memory access.

Engineers seeking a standard-density SDRAM in a small BGA footprint will find this device appropriate for designs that require configurable timing, standard refresh management, and operation across a broad temperature range.

Request a quote or submit an inquiry for pricing and availability to evaluate the IS45S32400E-7BLA1-TR for your next design.