IS45S32400E-7TLA1

The IS45S32400E-7TLA1 is a 128Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture and pipeline internal operation. It is a parallel SDRAM device designed for 3.3V memory systems and optimized for high-speed, fully synchronous data transfers.

This device targets designs that require low-latency, high-throughput parallel DRAM with programmable burst and timing options, delivered in an 86-pin TSOP-II package and specified for -40°C to +85°C operation.

Key Features

• Core Architecture  Quad-bank synchronous DRAM organized as 4M × 32 (1M × 32 × 4 banks) enabling internal bank operation for hiding row access and precharge.
• Memory Capacity & Format  128 Mbit total memory capacity in DRAM format providing parallel data paths for fast transfers.
• Performance Grades  Available clock-frequency grades including 166, 143 and 133 MHz; the -7 grade provides a 143 MHz clock with access time from clock of 5.4 ns at CAS latency = 3.
• Programmable Burst & Timing  Programmable burst lengths (1, 2, 4, 8, full page), burst sequence (sequential/interleave), and CAS latency options (2 or 3 clocks) for flexible timing and throughput tuning.
• Refresh & Self-Refresh  Auto Refresh (CBR) and Self Refresh supported; 4,096 refresh cycles with refresh intervals of 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grade).
• Interface & Signaling  Fully synchronous operation with all signals referenced to the positive clock edge and LVTTL-compatible interface for parallel memory systems.
• Power  Single power supply operation at 3.3 V ±0.3 V (specified 3.0 V to 3.6 V).
• Package & Temperature  Supplied in an 86-pin TSOP-II (86-TFSOP, 0.400", 10.16 mm width) package and specified for -40°C to +85°C ambient temperature (TA).
• Burst Operations & Termination  Supports burst read/write and burst read/single write operations with burst termination via burst stop and precharge commands.

Typical Applications

• High-speed memory subsystems  As parallel SDRAM in systems that require synchronous, low-latency data transfers and banked memory access.
• Buffer and frame memory  For designs that need programmable burst lengths and sequence control to manage contiguous or interleaved data streams.
• 3.3V memory designs  Integrates into 3.3 V VDD memory systems where a single 3.3 V supply and LVTTL interface are required.
• Industrial-temperature embedded systems  Suitable for applications requiring operation across -40°C to +85°C ambient temperature.

Unique Advantages

• Synchronous pipeline architecture: Internal pipeline and bank organization enable high-speed data transfer referenced to the positive clock edge.
• Flexible timing control: Programmable CAS latency (2 or 3 clocks) and multiple burst modes let designers optimize latency versus throughput.
• Multiple frequency options: Offered in 166, 143 and 133 MHz grades to match system timing requirements; the -7 grade provides 143 MHz performance with 5.4 ns access time at CL=3.
• Robust refresh modes: Auto Refresh and Self Refresh with selectable refresh intervals (16 ms or 64 ms) accommodate varied system refresh policies.
• Industry-standard package: 86-pin TSOP-II footprint (0.400", 10.16 mm width) simplifies board-level integration for parallel memory designs.

Why Choose IS45S32400E-7TLA1?

The IS45S32400E-7TLA1 combines a 128 Mbit density and quad-bank SDRAM architecture with programmable burst and timing options to provide configurable, high-speed parallel memory. Its fully synchronous interface, LVTTL signaling, and multiple frequency grades make it suitable for systems that need deterministic timing and flexible throughput options.

Specified for operation from -40°C to +85°C and powered from a single 3.3 V supply (3.0 V to 3.6 V), this device is intended for designers seeking a reliable, configurable 128Mb SDRAM in an 86-pin TSOP-II package backed by ISSI device specifications.

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