IS45S32400E-7TLA2

The IS45S32400E-7TLA2 is a 128Mbit synchronous DRAM organized as 4M × 32 with a quad-bank, pipelined architecture. It is a parallel-interface SDRAM designed for use in 3.3V memory systems where fully synchronous, clock-referenced operation and programmable burst access are required.

Typical deployment is in systems that require high-speed, pipelined SDRAM access with flexible burst and latency configuration, supported by a standard 86‑pin TSOP II package and extended operating temperature up to -40°C to +105°C (TA).

Key Features

• Core Architecture  Quad-bank SDRAM internally organized as 1M × 32 × 4 banks to support hidden row access/precharge and pipelined high-speed transfers.
• Synchronous Operation  Fully synchronous device with all signals referenced to the positive clock edge; LVTTL interface.
• Performance  Clock frequency option at 143 MHz (‑7 speed grade) with programmable CAS latency (2 or 3 clocks) and an access time of 5.4 ns at CAS latency = 3.
• Burst and Column Flexibility  Programmable burst length (1, 2, 4, 8, full page), sequential/interleave burst sequence, and random column address every clock cycle for flexible data-transfer patterns.
• Refresh and Self-Refresh  Supports Auto Refresh (CBR) and Self Refresh; 4096 refresh cycles per refresh period (A2 grade: 16 ms; Commercial/Industrial/A1 grade: 64 ms) as specified in the datasheet.
• Power  Single power supply operation at 3.3 V (3.0–3.6 V supply range).
• Package and Mounting  Supplied in an 86‑TSOP II (86‑TFSOP, 0.400" / 10.16 mm width) package suitable for standard surface-mount assembly.
• Temperature Range  Operating ambient range documented at -40°C to +105°C (TA) for the specified device variant.

Typical Applications

• 3.3 V memory subsystems  Acts as synchronous DRAM in 3.3 V memory systems requiring 128 Mbit density and quad-bank operation.
• High-speed burst data buffering  Programmable burst lengths and CAS latency options enable adaptable buffering for designs needing burst read/write capability.
• Temperature-challenged environments  Devices with the documented -40°C to +105°C operating range are suitable where extended ambient temperature support is required.

Unique Advantages

• Fully synchronous, clock-referenced design: Ensures deterministic timing with all signals referenced to the positive clock edge for predictable system integration.
• Flexible performance configuration: Multiple clock-frequency grades and programmable CAS latency (2 or 3) let designers trade latency and throughput per application needs.
• Burst and access flexibility: Programmable burst length and sequence plus random column addressing every clock cycle simplify varied data-transfer patterns.
• Integrated refresh management: Auto Refresh and Self Refresh support with documented refresh cycles (4K) and timing options by grade.
• Industry-standard package: 86‑TSOP II footprint (10.16 mm width) for straightforward board-level integration and assembly.
• 3.3 V single-supply operation: Matches common 3.3 V memory system rails (3.0–3.6 V supply range) for compatibility with standard power domains.

Why Choose IS45S32400E-7TLA2?

The IS45S32400E-7TLA2 positions itself as a specification-driven 128Mbit SDRAM option for designs that require fully synchronous, programmable burst operation and quad-bank architecture. Its documented timing (5.4 ns access at CL=3), 143 MHz speed grade, and LVTTL interface provide predictable performance for systems built around 3.3 V memory rails.

With Auto Refresh/Self Refresh support, flexible burst and CAS settings, and an 86‑TSOP II package, this device is suited to engineers seeking a well-documented SDRAM component for memory subsystems that demand configurability and extended ambient temperature capability.

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