IS45S32400F-6BLA1-TR

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 942 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-6BLA1-TR – IC DRAM 128Mbit PAR 90-TFBGA

The IS45S32400F-6BLA1-TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 4M × 32 with a parallel memory interface. It operates with a clock frequency up to 166 MHz and is supplied from a 3.0–3.6 V rail.

This device is provided in a 90-TFBGA (8×13) package and supports an ambient operating temperature range of -40°C to 85°C, making it suitable for systems that require mid-density parallel SDRAM with defined speed and power characteristics.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 4M × 32, offering a parallel 32-bit data width for systems requiring word-aligned data transfers.
  • Performance Supports a clock frequency of 166 MHz with an access time of 5.4 ns, enabling deterministic synchronous memory timing.
  • Voltage & Power Operates from a 3.0–3.6 V supply range, compatible with standard 3 V SDRAM power domains.
  • Package Supplied in a 90-TFBGA (8×13) package, providing a compact ball-grid array footprint for board-level integration.
  • Temperature Range Rated for ambient operation from -40°C to 85°C (TA), supporting a wide commercial/industrial thermal envelope.
  • Interface Parallel memory interface suitable for systems that use synchronous parallel DRAM timing and control signals.

Typical Applications

  • Parallel memory systems For designs that require a 32-bit parallel SDRAM interface and 128 Mbit density, providing word-aligned storage with synchronous timing.
  • Performance-oriented designs Where a 166 MHz clock and 5.4 ns access times are needed to meet system timing requirements.
  • Temperature-flexible deployments Systems operating across -40°C to 85°C that need a mid-density DRAM option in a compact BGA package.

Unique Advantages

  • Defined density and organization: 128 Mbit arranged as 4M × 32 simplifies memory mapping for 32-bit data buses.
  • Synchronous operation at 166 MHz: Enables predictable timing and integration with synchronous memory controllers.
  • Industry-standard supply range: 3.0–3.6 V compatibility fits common 3 V power rails without special level translation.
  • Compact 90-TFBGA package: Small BGA footprint reduces PCB area while providing robust ball-grid connections.
  • Wide operating temperature: -40°C to 85°C support helps ensure operation across varied ambient conditions.

Why Choose IS45S32400F-6BLA1-TR?

The IS45S32400F-6BLA1-TR positions itself as a clear choice when a design requires a mid-density, parallel SDRAM device with defined synchronous performance and a compact BGA package. Its 4M × 32 organization, 166 MHz clock capability, and 3.0–3.6 V supply make it straightforward to integrate into systems that depend on a 32-bit parallel memory interface.

This device is well suited for engineers and procurement teams seeking a reliable 128 Mbit SDRAM option with measurable specifications for clock, access time, package, and temperature range, enabling predictable system behavior and simplified memory mapping.

Request a quote or submit an RFQ to obtain pricing, availability, and lead-time information for the IS45S32400F-6BLA1-TR.

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