IS45S32400F-6TLA2

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 1,334 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-6TLA2 – 128 Mbit SDRAM, Parallel, 86‑TSOP II

The IS45S32400F-6TLA2 is a volatile SDRAM memory device with a 128 Mbit capacity organized as 4M × 32. It implements a parallel memory interface and is offered in an 86‑TSOP II (10.16 mm width) package.

Designed for system-level memory expansion, the device targets applications that require a parallel SDRAM with a 166 MHz clock capability, a 5.4 ns access time, 3.0–3.6 V supply range, and an extended operating temperature range of −40 °C to 105 °C.

Key Features

  • Memory Architecture 128 Mbit capacity arranged as 4M × 32, providing a wide 32‑bit data path for parallel memory operations.
  • SDRAM Technology Synchronous DRAM architecture with parallel interface for standard SDRAM system integration.
  • Performance Supports a clock frequency of 166 MHz and specified access time of 5.4 ns to meet moderate-performance memory timing needs.
  • Power Operates from a 3.0 V to 3.6 V supply range compatible with common 3.3 V system rails.
  • Package and Mounting Supplied in an 86‑TSOP II (0.400", 10.16 mm width) surface‑mount package for board‑level implementations.
  • Environmental Range Rated for operation from −40 °C to 105 °C (TA), supporting deployments in wide‑temperature environments.

Typical Applications

  • Embedded systems — Board‑level parallel SDRAM memory for embedded controllers and processors requiring 128 Mbit working storage.
  • Industrial equipment — Memory solution for systems that require operation across −40 °C to 105 °C.
  • Memory expansion — On‑board DRAM expansion where a 32‑bit parallel data path and 86‑TSOP II footprint are required.
  • 3.3 V systems — Integration into designs powered from 3.0–3.6 V supply rails.

Unique Advantages

  • 128 Mbit density: Provides a compact high‑capacity memory option without increasing chip count.
  • 4M × 32 organization: Wide 32‑bit data path simplifies bus interfacing and supports efficient parallel transfers.
  • 166 MHz clock support: Enables synchronous operation at common SDRAM timing for moderate throughput needs.
  • Wide operating temperature: −40 °C to 105 °C rating supports applications in extended temperature environments.
  • Standard 3.0–3.6 V operation: Compatible with typical 3.3 V system architectures for straightforward power integration.
  • 86‑TSOP II package: Compact surface‑mount footprint suitable for constrained board layouts.

Why Choose IS45S32400F-6TLA2?

The IS45S32400F-6TLA2 combines a 128 Mbit SDRAM architecture with a 4M × 32 organization and a parallel interface, delivering a straightforward memory building block for designs that require a wide data path and synchronous operation. Its 166 MHz clock capability and 5.4 ns access time provide predictable timing for system memory subsystems.

With a 3.0–3.6 V supply range and an extended −40 °C to 105 °C operating window, this ISSI device suits a range of board‑level applications where standard voltage compatibility, compact TSOP II packaging, and wide temperature tolerance are important considerations.

Request a quote or submit an inquiry to obtain pricing and availability for the IS45S32400F-6TLA2.

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