IS45S32400F-7BLA1

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 1,462 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-7BLA1 – 128 Mbit SDRAM, 90‑TFBGA

The IS45S32400F-7BLA1 is a 128 Mbit volatile SDRAM device organized as 4M × 32 and supplied in a 90‑TFBGA (8×13) package. It implements a parallel memory interface and is specified for operation from 3.0 V to 3.6 V.

Designed for systems that require fast parallel DRAM capacity, the device provides a clock frequency of 143 MHz and an access time of 5.4 ns, and is rated for an ambient temperature range of −40 °C to 85 °C.

Key Features

  • Memory Core 128 Mbit DRAM organized as 4M × 32 for parallel data paths and predictable memory mapping.
  • Technology SDRAM volatile memory format suitable for systems requiring dynamic memory storage.
  • Performance Specified 143 MHz clock frequency and 5.4 ns access time for high-speed parallel memory operations.
  • Interface Parallel memory interface to support direct bus connections in embedded and system-level designs.
  • Power Rated supply voltage range of 3.0 V to 3.6 V to match standard 3 V SDRAM power rails.
  • Package 90‑TFBGA package (8×13) for compact board-level integration.
  • Environmental Operating ambient temperature range from −40 °C to 85 °C for use across a broad thermal envelope.

Typical Applications

  • Embedded systems — Use as parallel SDRAM memory in designs that require 4M × 32 organization and 128 Mbit capacity.
  • System buffers and working memory — Provides fast access (5.4 ns) and 143 MHz clocked operation for temporary data storage in system-level designs.
  • Industrial equipment — Rated operating temperature of −40 °C to 85 °C supports deployment in a range of industrial ambient conditions.

Unique Advantages

  • Defined density and organization: 128 Mbit capacity in a 4M × 32 arrangement simplifies memory mapping and design planning.
  • High-speed parallel operation: 143 MHz clock frequency and 5.4 ns access time provide measurable timing characteristics for system designers.
  • Standard 3 V power domain: 3.0 V–3.6 V supply compatibility aligns with common 3 V SDRAM power rails.
  • Compact BGA footprint: 90‑TFBGA (8×13) package supports higher board density and consistent package geometry.
  • Wide ambient temperature rating: −40 °C to 85 °C operating range helps ensure reliable operation across varied environments.
  • Parallel interface support: Direct parallel memory interface for straightforward integration with parallel data buses.

Why Choose IS45S32400F-7BLA1?

The IS45S32400F-7BLA1 delivers a clearly defined 128 Mbit SDRAM solution with documented timing (143 MHz clock, 5.4 ns access) and a 4M × 32 organization that aids straightforward system integration. Its 90‑TFBGA package and 3.0 V–3.6 V supply range make it suitable for compact, performance-oriented designs operating across a wide ambient temperature range.

This device is appropriate for designers and procurement teams seeking a verifiable parallel DRAM memory building block from Integrated Silicon Solution Inc. that matches specific capacity, timing, package, voltage, and temperature requirements.

Request a quote or submit an inquiry for pricing and availability of the IS45S32400F-7BLA1.

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