IS45S32400F-7BLA2-TR
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 349 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S32400F-7BLA2-TR – IC DRAM 128MBIT PAR 90TFBGA
The IS45S32400F-7BLA2-TR is a 128 Mbit parallel SDRAM device organized as 4M × 32. It delivers parallel SDRAM storage in a compact 90‑TFBGA (8×13) package for designs that require volatile, high-density memory.
This device targets systems that need a 32‑bit parallel memory interface with a supply range of 3.0 V to 3.6 V and extended operating temperature from −40°C to 105°C, offering a balance of capacity, access speed, and package density.
Key Features
- Memory Type Volatile SDRAM organized as 4M × 32, providing 128 Mbit total storage.
- Performance Rated clock frequency up to 143 MHz with an access time of 5.4 ns, enabling fast parallel memory access.
- Interface & Organization Parallel 32‑bit interface (4M × 32) suitable for systems requiring wide data paths and direct bus integration.
- Power Operates from a 3.0 V to 3.6 V supply range to match common 3 V system rails.
- Package 90‑TFBGA package (8 × 13 mm) providing high density mounting for space‑constrained boards.
- Operating Temperature Specified for −40°C to 105°C (TA), supporting extended ambient temperature operation.
Typical Applications
- Embedded Systems Use as system SDRAM where a 32‑bit parallel memory interface and 128 Mbit capacity are required.
- Buffering and Frame Storage Provides parallel memory capacity for buffering or temporary frame storage in designs that use a parallel bus.
- Processor Memory Expansion Adds 4M × 32 SDRAM capacity for processors or controllers that accept a parallel DRAM interface.
- Industrial Equipment Suitable for equipment requiring extended temperature support (−40°C to 105°C) and compact package integration.
Unique Advantages
- Compact high‑density package: 90‑TFBGA (8×13) packaging delivers 128 Mbit SDRAM in a small footprint for space‑limited PCB layouts.
- Wide 32‑bit data path: 4M × 32 organization supports wider bus architectures and simplifies interfacing with 32‑bit systems.
- Fast access and clocking: 5.4 ns access time combined with a 143 MHz clock rating supports responsive parallel memory operations.
- Standard 3 V supply compatibility: 3.0 V to 3.6 V supply range aligns with common 3 V system rails for straightforward power integration.
- Extended temperature range: −40°C to 105°C rating enables deployment in environments with elevated or wide temperature requirements.
- Manufacturer backing: Produced by Integrated Silicon Solution Inc (ISSI), providing vendor traceability for design and sourcing.
Why Choose IS45S32400F-7BLA2-TR?
The IS45S32400F-7BLA2-TR combines 128 Mbit of parallel SDRAM capacity with a 4M × 32 organization, fast access timing (5.4 ns), and support for up to 143 MHz clocking, making it a practical choice for designs that require compact, high‑density volatile memory with a 32‑bit parallel interface. Its 90‑TFBGA package and 3.0 V–3.6 V supply range simplify integration into space‑constrained boards and standard 3 V systems.
With an extended operating temperature range of −40°C to 105°C and manufacture by Integrated Silicon Solution Inc, this device is suitable for engineers seeking a verifiable SDRAM component for applications needing reliable parallel memory capacity and predictable electrical characteristics.
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