IS45S32400F-7TLA1

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 882 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-7TLA1 – 128 Mbit SDRAM, Parallel Interface, 86‑TSOP II

The IS45S32400F-7TLA1 is a 128 Mbit volatile DRAM device implemented in SDRAM technology with a parallel memory interface. It is organized as 4M × 32 and is designed to provide working memory or buffer storage in systems that require parallel SDRAM.

Key electrical and mechanical characteristics include a clock frequency of 143 MHz, an access time of 5.4 ns, a supply voltage range of 3.0–3.6 V, and an 86‑TSOP II package (86‑TFSOP, 0.400" / 10.16 mm width). The device is specified for ambient operation from −40 °C to 85 °C.

Key Features

  • Memory Architecture Organized as 4M × 32 bits to deliver a total density of 128 Mbit.
  • Technology & Interface SDRAM technology with a parallel memory interface for conventional parallel memory systems.
  • Performance Rated clock frequency of 143 MHz with an access time of 5.4 ns, providing defined timing characteristics for system memory operations.
  • Voltage Supply voltage range of 3.0–3.6 V, compatible with standard 3.3 V designs.
  • Package Supplied in an 86‑TSOP II (86‑TFSOP) package, 0.400" (10.16 mm) width, suitable for surface-mount PCB assembly.
  • Operating Temperature Specified ambient temperature range from −40 °C to 85 °C.

Typical Applications

  • System Memory Provides 128 Mbit of parallel DRAM for systems requiring external working memory or buffering.
  • Parallel SDRAM Designs Fits designs that employ a parallel memory interface and require a 4M × 32 organization.
  • Board-Level Memory Expansion Suitable for adding discrete SDRAM capacity in designs where an 86‑TSOP II package is acceptable.

Unique Advantages

  • Clear capacity and organization: 4M × 32 structure delivering 128 Mbit makes sizing and memory mapping straightforward.
  • Defined timing performance: 143 MHz clock rating and 5.4 ns access time provide deterministic access characteristics for system designers.
  • Standard 3.3 V compatibility: 3.0–3.6 V supply range aligns with common 3.3 V system rails.
  • Industry-standard package: 86‑TSOP II (10.16 mm width) offers a compact surface-mount form factor for board-level integration.
  • Wide ambient range: −40 °C to 85 °C operating specification supports deployments across a broad temperature envelope.
  • Manufacturer: Produced by Integrated Silicon Solution Inc (ISSI), providing documented device specifications.

Why Choose IS45S32400F-7TLA1?

The IS45S32400F-7TLA1 positions itself as a discrete parallel SDRAM device that combines a 128 Mbit density, a 4M × 32 organization, and defined timing (143 MHz / 5.4 ns) in an 86‑TSOP II package. These characteristics make it suitable for designs that require a specified parallel DRAM capacity and predictable electrical behavior within a 3.0–3.6 V supply environment and −40 °C to 85 °C ambient range.

For projects that need a documented, parallel SDRAM component from a recognized vendor (Integrated Silicon Solution Inc), this device provides the listed electrical, mechanical, and temperature specifications to support system memory and buffer requirements.

Request a quote or submit an inquiry to obtain pricing, lead time, and availability information for the IS45S32400F-7TLA1.

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