IS45S32400F-7TLA2-TR

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 794 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-7TLA2-TR – IC DRAM 128MBIT PAR 86TSOP II

The IS45S32400F-7TLA2-TR is a 128 Mbit volatile SDRAM organized as 4M × 32 with a parallel memory interface. It delivers a clocked SDRAM architecture with a 143 MHz clock frequency and a 5.4 ns access time in an 86‑TSOP II (10.16 mm width) package.

This device is intended for systems that require a compact, board‑mounted parallel DRAM solution operating from a 3.0 V to 3.6 V supply and capable of operating across a wide temperature range of -40°C to 105°C (TA).

Key Features

  • Memory Core 128 Mbit SDRAM configured as 4M × 32 for parallel data organization and predictable memory mapping.
  • Performance Rated clock frequency of 143 MHz with an access time of 5.4 ns to support time‑sensitive memory operations.
  • Interface Parallel SDRAM interface suitable for systems that use synchronous parallel memory architectures.
  • Power Operates from a 3.0 V to 3.6 V supply voltage, enabling integration with 3.3 V logic domains.
  • Package Supplied in an 86‑TSOP II (86‑TFSOP, 0.400", 10.16 mm width) surface‑mount package for dense board placement.
  • Temperature Range Specified for an ambient operating range of -40°C to 105°C (TA) for use in environments requiring extended thermal tolerance.

Typical Applications

  • General-purpose SDRAM storage — Provides 128 Mbit of volatile SDRAM for designs that require a 4M × 32 parallel memory array with 143 MHz clock capability.
  • Embedded system memory — Fits board‑level implementations needing a compact 86‑TSOP II package and 3.0–3.6 V supply compatibility.
  • Industrial electronics — Suited for applications demanding an extended operating temperature range of -40°C to 105°C.

Unique Advantages

  • Clear memory density and organization: 128 Mbit organized as 4M × 32 simplifies address and data planning for parallel designs.
  • Clocked SDRAM performance: 143 MHz clock rating and 5.4 ns access time provide deterministic timing for synchronous memory operations.
  • 3.0–3.6 V supply compatibility: Matches common 3.3 V system rails to ease power‑domain integration.
  • Compact board footprint: 86‑TSOP II package allows high‑density placement on PCB designs requiring surface‑mount DRAM.
  • Wide operating temperature: -40°C to 105°C rating supports deployment in thermally demanding environments.

Why Choose IS45S32400F-7TLA2-TR?

The IS45S32400F-7TLA2-TR positions itself as a straightforward, specification‑driven SDRAM device for designs that need a 128 Mbit parallel memory with defined timing (143 MHz clock, 5.4 ns access) and standard 3.0–3.6 V operation. Its 4M × 32 organization and compact 86‑TSOP II package make it suitable for board‑level memory implementations where package density and thermal range are key considerations.

This device is appropriate for engineers specifying synchronous DRAM in systems requiring verifiable electrical and thermal parameters, enabling predictable integration and long‑term design stability.

Request a quote or submit an inquiry to obtain pricing and availability for the IS45S32400F-7TLA2-TR.

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