IS45S32400F-7TLA2

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 192 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-7TLA2 – IC DRAM 128MBIT PAR 86TSOP II

The IS45S32400F-7TLA2 is a 128 Mbit SDRAM device organized as 4M × 32 with a parallel memory interface. It provides volatile DRAM storage with defined timing and power characteristics for systems that require synchronous parallel memory.

Designed for applications that need mid-density parallel SDRAM, the device combines 143 MHz clocking and a 5.4 ns access time with a compact 86‑TSOP II package and an operating range suited for extended-temperature environments.

Key Features

  • Memory Type & Organization 128 Mbit SDRAM organized as 4M × 32, formatted as volatile DRAM for synchronous parallel access.
  • Performance Supports a 143 MHz clock frequency with a listed access time of 5.4 ns.
  • Interface Parallel memory interface for direct integration into systems requiring synchronous parallel DRAM.
  • Power Operates from a 3.0 V to 3.6 V supply range.
  • Package Supplied in an 86‑TSOP II package (86‑TFSOP, 0.400", 10.16 mm width) suitable for surface-mount PCB assembly.
  • Temperature Range Rated for operation from −40°C to 105°C (TA).

Typical Applications

  • Embedded systems — Use as parallel SDRAM storage where 128 Mbit capacity and synchronous access are required.
  • Industrial electronics — Extended −40°C to 105°C operating range supports deployment in temperature-challenged environments.
  • System memory expansion — Parallel interface and 4M × 32 organization enable integration into designs requiring mid-density DRAM.

Unique Advantages

  • Mid-density SDRAM capacity: 128 Mbit organization (4M × 32) provides a balance between capacity and board-level cost for systems needing synchronous DRAM.
  • Defined performance: 143 MHz clock frequency and 5.4 ns access time supply measurable timing characteristics for system timing budgets.
  • Wide supply tolerance: 3.0–3.6 V operating range accommodates standard 3 V memory power rails.
  • Extended temperature rating: −40°C to 105°C operation supports deployment in industrial and other temperature-demanding environments.
  • Compact TSOP II package: 86‑TSOP II (0.400", 10.16 mm width) provides a surface-mount footprint for space-constrained PCBs.

Why Choose IS45S32400F-7TLA2?

The IS45S32400F-7TLA2 positions itself as a practical mid-density SDRAM option for designs that require synchronous parallel DRAM with defined timing, a 3.0–3.6 V supply, and an extended operating temperature range. Its 4M × 32 organization and 143 MHz capability make it suitable for systems where measured performance and predictable timing are important.

This device is appropriate for engineers specifying volatile SDRAM in embedded, industrial, or system-memory expansion roles who need a compact 86‑TSOP II package and clear electrical and thermal limits. The combination of capacity, interface, and package supports straightforward integration into designs targeting those requirements.

Request a quote or contact sales to discuss availability and pricing for the IS45S32400F-7TLA2 and to get additional ordering or technical information.

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