IS45S32400F-7BLA2

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 1,870 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-7BLA2 – IC DRAM 128MBIT PAR 90TFBGA

The IS45S32400F-7BLA2 is a 128 Mbit volatile SDRAM device organized as 4M × 32 with a parallel memory interface. It delivers a 143 MHz clock rate and a 5.4 ns access time in a 90‑TFBGA (8×13) package, and operates from a 3.0 V to 3.6 V supply across an ambient temperature range of −40°C to 105°C.

Key Features

  • Memory Type & Capacity 128 Mbit SDRAM providing volatile storage suitable for designs that require parallel DRAM memory.
  • Memory Organization Organized as 4M × 32, offering a 32‑bit wide parallel data path to support wide-bus data transfers.
  • Performance Operates with a 143 MHz clock frequency and a 5.4 ns access time to enable tight memory access timing.
  • Interface Parallel memory interface for direct connection to parallel memory controllers and bus architectures.
  • Power Single-supply operation from 3.0 V to 3.6 V, compatible with 3.3 V system rails.
  • Package 90‑TFBGA (8×13) supplier device package for board-level integration where a low-profile BGA is required.
  • Operating Temperature Specified ambient range of −40°C to 105°C for applications requiring extended temperature operation.

Typical Applications

  • Embedded systems Use as parallel SDRAM storage in systems that require a 32‑bit data bus and 128 Mbit memory capacity.
  • Board-level memory expansion Integration as on‑board DRAM where a 90‑TFBGA (8×13) component and 3.0–3.6 V supply are required.
  • Industrial electronics Deployment in equipment that benefits from the device's −40°C to 105°C ambient operating range and parallel interface.

Unique Advantages

  • 128 Mbit density: Provides a defined capacity organized as 4M × 32 to meet specific memory-size requirements.
  • 32‑bit parallel data path: The 4M × 32 organization supports wide-bus transfers for platforms using parallel memory architectures.
  • Measured timing: 143 MHz clock operation with a 5.4 ns access time delivers predictable memory performance for time-sensitive designs.
  • Standard 3.3 V compatibility: Operates from 3.0 V to 3.6 V, aligning with common 3.3 V system power rails.
  • Compact BGA footprint: 90‑TFBGA (8×13) package enables board-level placement in designs that require a small, low-profile package.
  • Extended temperature capability: Rated for −40°C to 105°C ambient operation to support applications with broader thermal requirements.

Why Choose IS45S32400F-7BLA2?

The IS45S32400F-7BLA2 is positioned for designs that require a parallel SDRAM device with a 32‑bit data interface, defined 128 Mbit capacity, and measurable timing (143 MHz clock, 5.4 ns access). Its 3.0–3.6 V supply range and 90‑TFBGA (8×13) package make it suitable for board-level integration in systems that need compact DRAM in an extended temperature envelope.

This device is well suited to engineers and procurement teams specifying parallel SDRAM for embedded, industrial, or board-memory expansion applications where the listed electrical, timing, package, and temperature characteristics match system requirements.

To request a quote or submit a parts inquiry for IS45S32400F-7BLA2, please contact sales for pricing and availability information.

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