IS45S32400F-6TLA2-TR

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 298 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-6TLA2-TR – IC DRAM 128MBIT PAR 86TSOP II

The IS45S32400F-6TLA2-TR is a 128‑Mbit volatile SDRAM device organized as 4M × 32 with a parallel memory interface. It delivers 166 MHz clock operation and a 5.4 ns access time in an 86‑TSOP II (10.16 mm width) package.

Designed for applications that require compact, parallel DRAM memory, this device offers industry‑standard supply and thermal ranges with a 3.0–3.6 V supply and an operating temperature range of −40 °C to 105 °C.

Key Features

  • Memory Core 128 Mbit volatile DRAM implemented as SDRAM for parallel memory operation.
  • Organization 4M × 32 memory organization providing a 32‑bit wide data path.
  • Performance Rated for a 166 MHz clock frequency with a 5.4 ns access time.
  • Voltage Supply Operates from 3.0 V to 3.6 V, matching standard 3 V SDRAM supply rails.
  • Package 86‑TSOP II (0.400", 10.16 mm width) supplier device package for compact board-level integration.
  • Operating Temperature Wide operating range from −40 °C to 105 °C (TA) suitable for elevated temperature environments.
  • Interface Parallel memory interface suitable for board designs expecting standard DRAM signaling.

Typical Applications

  • Parallel memory subsystems — Used where a 32‑bit parallel SDRAM is required to provide temporary storage and buffering in system designs.
  • Board-level DRAM implementations — Suitable for integration on printed circuit boards needing a compact 86‑TSOP II packaged DRAM.
  • High-speed buffering — Employed in designs that utilize a 166 MHz clock and 5.4 ns access timing for short-latency data buffering.

Unique Advantages

  • 128 Mbit density: Provides substantial memory capacity in a single 4M × 32 device, simplifying board design for mid-density DRAM needs.
  • Fast access timing: 5.4 ns access time and 166 MHz clock rating enable low-latency memory operations where timing matters.
  • Standard 3.0–3.6 V supply: Compatible with common 3 V SDRAM power rails, easing power‑supply design and system integration.
  • Compact TSOP II package: 86‑TSOP II form factor with 10.16 mm width supports compact board layouts and straightforward solder mounting.
  • Extended temperature range: −40 °C to 105 °C operation supports deployments in thermally demanding environments.

Why Choose IS45S32400F-6TLA2-TR?

The IS45S32400F-6TLA2-TR provides a balanced combination of capacity, speed, and standard interfacing in a compact 86‑TSOP II package. Its 4M × 32 organization, 166 MHz clock capability, and 5.4 ns access time make it a suitable choice for designs requiring parallel SDRAM with reliable timing and moderate density.

This device is appropriate for engineers specifying board-level DRAM where 3.0–3.6 V supply compatibility and an extended −40 °C to 105 °C operating range are important. It offers straightforward integration for systems targeting compact form factors and consistent DRAM performance.

Request a quote or contact sales to discuss availability and volume pricing for the IS45S32400F-6TLA2-TR.

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