IS45S32400F-6TLA2-TR
| Part Description |
IC DRAM 128MBIT PAR 86TSOP II |
|---|---|
| Quantity | 298 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S32400F-6TLA2-TR – IC DRAM 128MBIT PAR 86TSOP II
The IS45S32400F-6TLA2-TR is a 128‑Mbit volatile SDRAM device organized as 4M × 32 with a parallel memory interface. It delivers 166 MHz clock operation and a 5.4 ns access time in an 86‑TSOP II (10.16 mm width) package.
Designed for applications that require compact, parallel DRAM memory, this device offers industry‑standard supply and thermal ranges with a 3.0–3.6 V supply and an operating temperature range of −40 °C to 105 °C.
Key Features
- Memory Core 128 Mbit volatile DRAM implemented as SDRAM for parallel memory operation.
- Organization 4M × 32 memory organization providing a 32‑bit wide data path.
- Performance Rated for a 166 MHz clock frequency with a 5.4 ns access time.
- Voltage Supply Operates from 3.0 V to 3.6 V, matching standard 3 V SDRAM supply rails.
- Package 86‑TSOP II (0.400", 10.16 mm width) supplier device package for compact board-level integration.
- Operating Temperature Wide operating range from −40 °C to 105 °C (TA) suitable for elevated temperature environments.
- Interface Parallel memory interface suitable for board designs expecting standard DRAM signaling.
Typical Applications
- Parallel memory subsystems — Used where a 32‑bit parallel SDRAM is required to provide temporary storage and buffering in system designs.
- Board-level DRAM implementations — Suitable for integration on printed circuit boards needing a compact 86‑TSOP II packaged DRAM.
- High-speed buffering — Employed in designs that utilize a 166 MHz clock and 5.4 ns access timing for short-latency data buffering.
Unique Advantages
- 128 Mbit density: Provides substantial memory capacity in a single 4M × 32 device, simplifying board design for mid-density DRAM needs.
- Fast access timing: 5.4 ns access time and 166 MHz clock rating enable low-latency memory operations where timing matters.
- Standard 3.0–3.6 V supply: Compatible with common 3 V SDRAM power rails, easing power‑supply design and system integration.
- Compact TSOP II package: 86‑TSOP II form factor with 10.16 mm width supports compact board layouts and straightforward solder mounting.
- Extended temperature range: −40 °C to 105 °C operation supports deployments in thermally demanding environments.
Why Choose IS45S32400F-6TLA2-TR?
The IS45S32400F-6TLA2-TR provides a balanced combination of capacity, speed, and standard interfacing in a compact 86‑TSOP II package. Its 4M × 32 organization, 166 MHz clock capability, and 5.4 ns access time make it a suitable choice for designs requiring parallel SDRAM with reliable timing and moderate density.
This device is appropriate for engineers specifying board-level DRAM where 3.0–3.6 V supply compatibility and an extended −40 °C to 105 °C operating range are important. It offers straightforward integration for systems targeting compact form factors and consistent DRAM performance.
Request a quote or contact sales to discuss availability and volume pricing for the IS45S32400F-6TLA2-TR.