IS45S32400F-7BLA1-TR
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 158 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S32400F-7BLA1-TR – 128 Mbit Parallel SDRAM, 90‑TFBGA
The IS45S32400F-7BLA1-TR is a 128 Mbit volatile DRAM device implemented as SDRAM with a parallel memory interface. It is organized as 4M × 32 bits and operates at a clock frequency up to 143 MHz, delivering a compact DRAM option in a 90‑TFBGA (8×13) package.
Designed for system-level memory integration, the device supports standard 3.0 V to 3.6 V supply ranges and an ambient operating temperature from −40 °C to 85 °C, making it suitable for designs that require defined electrical and thermal operating windows.
Key Features
- Memory Type & Capacity 128 Mbit volatile DRAM, organized as 4M × 32 bits for parallel data paths.
- SDRAM Architecture Synchronous DRAM (SDRAM) core supporting parallel interface operation with defined access timing.
- Performance Rated clock frequency up to 143 MHz and access time of 5.4 ns, providing deterministic SDRAM timing for system memory slots.
- Power Supply Operates from a 3.0 V to 3.6 V supply range to match common 3 V SDRAM power rails.
- Package 90‑TFBGA (8×13) supplier device package that supports board-level placement in compact form factors.
- Operating Temperature Specified for ambient operation from −40 °C to 85 °C.
- Interface Parallel memory interface suitable for systems requiring conventional SDRAM bus connectivity.
Typical Applications
- Parallel memory subsystems — Acts as a 128 Mbit parallel SDRAM component where 4M × 32 organization is required.
- Board-level DRAM expansions — Suitable for designs needing a compact 90‑TFBGA package for additional volatile memory.
- Temperature-conditioned designs — Fits systems operating within the −40 °C to 85 °C ambient range.
Unique Advantages
- Defined capacity and organization: 128 Mbit in a 4M × 32 configuration simplifies memory mapping and bus planning.
- Synchronous operation at up to 143 MHz: Provides predictable SDRAM timing with a specified 5.4 ns access time for system-level integration.
- Standard 3.0–3.6 V supply: Matches common 3 V SDRAM rails to ease power-supply design and compatibility.
- Compact ball grid package: 90‑TFBGA (8×13) enables high-density placement on PCBs where board space is limited.
- Wide operating temperature: −40 °C to 85 °C qualification supports use in thermally varied ambient conditions.
Why Choose IS45S32400F-7BLA1-TR?
The IS45S32400F-7BLA1-TR positions itself as a straightforward SDRAM option for systems requiring a 128 Mbit parallel memory device with defined timing and supply requirements. Its 4M × 32 organization, 143 MHz clock rating, and 5.4 ns access time provide clear electrical parameters for system integration and memory map planning.
This device is appropriate for designs that need a compact 90‑TFBGA package and operation across a −40 °C to 85 °C ambient range, offering predictable performance and clear specification boundaries for procurement and hardware validation.
Request a quote or submit a pricing and availability inquiry to obtain lead-time and ordering information for the IS45S32400F-7BLA1-TR.