IS45S32400F-7BLA1-TR

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 158 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-7BLA1-TR – 128 Mbit Parallel SDRAM, 90‑TFBGA

The IS45S32400F-7BLA1-TR is a 128 Mbit volatile DRAM device implemented as SDRAM with a parallel memory interface. It is organized as 4M × 32 bits and operates at a clock frequency up to 143 MHz, delivering a compact DRAM option in a 90‑TFBGA (8×13) package.

Designed for system-level memory integration, the device supports standard 3.0 V to 3.6 V supply ranges and an ambient operating temperature from −40 °C to 85 °C, making it suitable for designs that require defined electrical and thermal operating windows.

Key Features

  • Memory Type & Capacity 128 Mbit volatile DRAM, organized as 4M × 32 bits for parallel data paths.
  • SDRAM Architecture Synchronous DRAM (SDRAM) core supporting parallel interface operation with defined access timing.
  • Performance Rated clock frequency up to 143 MHz and access time of 5.4 ns, providing deterministic SDRAM timing for system memory slots.
  • Power Supply Operates from a 3.0 V to 3.6 V supply range to match common 3 V SDRAM power rails.
  • Package 90‑TFBGA (8×13) supplier device package that supports board-level placement in compact form factors.
  • Operating Temperature Specified for ambient operation from −40 °C to 85 °C.
  • Interface Parallel memory interface suitable for systems requiring conventional SDRAM bus connectivity.

Typical Applications

  • Parallel memory subsystems — Acts as a 128 Mbit parallel SDRAM component where 4M × 32 organization is required.
  • Board-level DRAM expansions — Suitable for designs needing a compact 90‑TFBGA package for additional volatile memory.
  • Temperature-conditioned designs — Fits systems operating within the −40 °C to 85 °C ambient range.

Unique Advantages

  • Defined capacity and organization: 128 Mbit in a 4M × 32 configuration simplifies memory mapping and bus planning.
  • Synchronous operation at up to 143 MHz: Provides predictable SDRAM timing with a specified 5.4 ns access time for system-level integration.
  • Standard 3.0–3.6 V supply: Matches common 3 V SDRAM rails to ease power-supply design and compatibility.
  • Compact ball grid package: 90‑TFBGA (8×13) enables high-density placement on PCBs where board space is limited.
  • Wide operating temperature: −40 °C to 85 °C qualification supports use in thermally varied ambient conditions.

Why Choose IS45S32400F-7BLA1-TR?

The IS45S32400F-7BLA1-TR positions itself as a straightforward SDRAM option for systems requiring a 128 Mbit parallel memory device with defined timing and supply requirements. Its 4M × 32 organization, 143 MHz clock rating, and 5.4 ns access time provide clear electrical parameters for system integration and memory map planning.

This device is appropriate for designs that need a compact 90‑TFBGA package and operation across a −40 °C to 85 °C ambient range, offering predictable performance and clear specification boundaries for procurement and hardware validation.

Request a quote or submit a pricing and availability inquiry to obtain lead-time and ordering information for the IS45S32400F-7BLA1-TR.

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