IS45S32400F-7TLA1-TR
| Part Description |
IC DRAM 128MBIT PAR 86TSOP II |
|---|---|
| Quantity | 36 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S32400F-7TLA1-TR – IC DRAM 128MBIT PAR 86TSOP II
The IS45S32400F-7TLA1-TR is a 128‑Mbit volatile SDRAM device from ISSI (Integrated Silicon Solution Inc.). It is organized as 4M × 32 with a parallel memory interface and designed for systems that require fast, synchronous DRAM access.
Key performance characteristics include a 143 MHz clock frequency and a 5.4 ns access time, delivered in an 86‑TSOP II package and specified for operation from -40°C to 85°C. The device operates from a 3.0 V to 3.6 V supply.
Key Features
- Memory Type & Capacity 128 Mbit volatile SDRAM organized as 4M × 32 providing parallel DRAM storage.
- Performance Synchronous SDRAM with a rated clock frequency of 143 MHz and an access time of 5.4 ns for fast read/write operations.
- Interface Parallel memory interface suitable for designs that use standard DRAM parallel bus signaling.
- Power Operates from a 3.0 V to 3.6 V supply voltage range.
- Package Supplied in an 86‑TSOP II (86‑TFSOP, 0.400" / 10.16 mm width) package for compact board-level integration.
- Operating Range Specified for ambient temperatures from -40°C to 85°C (TA).
Typical Applications
- Embedded Systems Provides parallel SDRAM storage for microprocessor- or FPGA-based embedded platforms requiring 128‑Mbit memory.
- Networking and Communications Used where parallel SDRAM buffers and fast access times are needed for packet buffering or intermediate data storage.
- Consumer and Industrial Electronics Fits designs that require compact DRAM in an 86‑TSOP II form factor and wide operating temperature support.
Unique Advantages
- Compact Package: The 86‑TSOP II (0.400", 10.16 mm width) package enables space-efficient board layout without sacrificing pin count.
- Deterministic Parallel Interface: Parallel DRAM organization (4M × 32) simplifies integration with parallel-memory controllers and bus architectures.
- High-Speed Access: 143 MHz clock frequency and 5.4 ns access time deliver fast synchronous memory performance for latency-sensitive tasks.
- Wide Temperature Range: Rated from -40°C to 85°C (TA) for deployment in varied ambient conditions.
- Standard Supply Range: 3.0 V to 3.6 V operation aligns with common 3V SDRAM supply rails for system compatibility.
Why Choose IS45S32400F-7TLA1-TR?
The IS45S32400F-7TLA1-TR combines a straightforward parallel SDRAM architecture with defined high-speed timing (143 MHz, 5.4 ns) and a compact 86‑TSOP II package, making it suitable for designs that require 128‑Mbit synchronous DRAM in a small footprint. Its supply voltage range and industrial temperature rating support robust integration into a variety of embedded and industrial applications.
This device is appropriate for engineers and procurement teams specifying parallel SDRAM where predictable access times, standard 3V operation, and a compact package are primary selection criteria.
Request a quote or submit an inquiry to obtain pricing and availability for the IS45S32400F-7TLA1-TR.
