IS45S32400F-6BLA2

The IS45S32400F-6BLA2 is a volatile SDRAM device organized as 4M × 32 for a total memory capacity of 128 Mbit. It provides a parallel memory interface in a 90‑TFBGA (8×13) package.

Designed for applications that require parallel DRAM memory, this device offers a 166 MHz clock frequency and a 5.4 ns access time, operating over a 3.0 V to 3.6 V supply range and an ambient temperature range of −40 °C to 105 °C.

Key Features

• Memory Core 128 Mbit SDRAM organized as 4M × 32, supplied as a volatile dynamic RAM device.
• Performance Supports a 166 MHz clock frequency with an access time of 5.4 ns for fast read/write responsiveness.
• Interface Parallel memory interface suitable for systems using parallel DRAM architectures.
• Power Operates from a 3.0 V to 3.6 V supply range.
• Package 90‑TFBGA (8×13) package case for compact board-level integration.
• Temperature Range Rated for operation from −40 °C to 105 °C (TA), supporting extended ambient environments.

Typical Applications

• Parallel memory subsystems — Use where a 128 Mbit parallel SDRAM (4M × 32) is required for system memory or buffering.
• Embedded systems — Integration into embedded designs that demand a 3.0–3.6 V SDRAM solution with a 166 MHz clock.
• Industrial equipment — Suitable for equipment operating across an ambient range of −40 °C to 105 °C needing parallel DRAM capacity.

Unique Advantages

• Compact TFBGA footprint — 90‑TFBGA (8×13) package reduces board area for space-constrained designs.
• High-speed access — 166 MHz clock and 5.4 ns access time support higher throughput in parallel memory architectures.
• Appropriate voltage range — Operates from 3.0 V to 3.6 V to match common SDRAM power rails.
• Clear memory organization — 4M × 32 arrangement simplifies sizing and bus-width planning for system designers.
• Extended operating temperature — −40 °C to 105 °C rating supports applications with wider ambient temperature requirements.

Why Choose IS45S32400F-6BLA2?

The IS45S32400F-6BLA2 positions itself as a straightforward 128 Mbit parallel SDRAM solution combining defined memory organization (4M × 32), a 166 MHz clock domain, and a low access time of 5.4 ns. Its 90‑TFBGA package and 3.0–3.6 V supply make it suitable for designs where board space and standard SDRAM power rails are considerations.

This device is well suited to designers and procurement teams seeking a verified 128 Mbit parallel DRAM component that meets extended temperature requirements and provides a clear set of electrical and mechanical specifications for predictable integration.

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