IS45S32400F-6BLA1

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 637 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32400F-6BLA1 – IC DRAM 128Mbit PAR 90-TFBGA

The IS45S32400F-6BLA1 is a 128 Mbit volatile SDRAM device organized as 4M × 32 with a parallel memory interface in a 90‑TFBGA (8×13) package. It provides synchronous DRAM storage with a 166 MHz clock frequency and an access time of 5.4 ns for designs that require fast, parallel volatile memory.

This device is suited to systems that need compact, board‑mounted SDRAM with specified operating conditions, including a supply range of 3 V to 3.6 V and an ambient operating temperature from −40°C to 85°C (TA).

Key Features

  • Memory Core 128 Mbit SDRAM organized as 4M × 32, providing a parallel 32‑bit data path for system memory integration.
  • Performance Supports a 166 MHz clock frequency with an access time of 5.4 ns to meet synchronous DRAM timing requirements.
  • Interface Parallel memory interface suitable for direct connection to parallel memory controllers and bus architectures.
  • Power Specified supply range of 3 V to 3.6 V to match common 3.3 V system rails.
  • Package 90‑TFBGA (8×13) supplier device package for compact board footprint and surface mounting.
  • Operating Range Ambient operating temperature −40°C to 85°C (TA) for a broad range of environmental conditions.

Typical Applications

  • System Memory Use as parallel SDRAM for designs requiring 128 Mbit of volatile storage with a 32‑bit data organization.
  • Embedded Platforms Integration where a compact 90‑TFBGA footprint and synchronous DRAM timing are required.
  • Board‑Level Memory Expansion Deployment on PCBs to provide additional parallel SDRAM capacity within the specified voltage and temperature ranges.

Unique Advantages

  • Parallel 32‑bit Organization: 4M × 32 configuration provides a wide data path for efficient parallel data transfers.
  • Defined Timing Performance: 166 MHz clock frequency and 5.4 ns access time give clear, verifiable timing parameters for system design.
  • Wide Supply Range: Operates from 3 V to 3.6 V to align with common 3.3 V system rails and simplify power domain planning.
  • Compact BGA Package: 90‑TFBGA (8×13) package reduces board area while providing a surface‑mount solution for high‑density designs.
  • Extended Operating Temperature: −40°C to 85°C (TA) rating supports deployment across a broad set of ambient environments.

Why Choose IS45S32400F-6BLA1?

The IS45S32400F-6BLA1 positions itself as a straightforward, specification‑driven SDRAM option for designs needing 128 Mbit of parallel volatile memory with a 32‑bit data organization. Its defined clock and access timing, compact 90‑TFBGA footprint, and standard 3 V–3.6 V supply range make it suitable for engineers seeking predictable SDRAM behavior and straightforward board integration.

This device is appropriate for projects where verifiable timing, a known thermal operating window (−40°C to 85°C), and a compact BGA package are priorities. It offers clear electrical and package parameters to support long‑term design planning and component selection.

Request a quote or submit a pricing and availability inquiry to evaluate IS45S32400F-6BLA1 for your next design project.

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