IS45S32400E-7TLA1-TR

The IS45S32400E-7TLA1-TR is a 128Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with a quad-bank architecture and pipeline operation for high-speed data transfer. It is a fully synchronous parallel DRAM designed for systems requiring deterministic clock-referenced memory operation.

This device operates from a single 3.3 V supply (3.0 V to 3.6 V), supports up to 143 MHz clock operation for the -7 timing option, and is supplied in an 86-pin TSOP-II package with an industrial operating temperature range of -40°C to +85°C.

Key Features

• Core & Architecture  Fully synchronous SDRAM with internal quad-bank organization and pipeline architecture to support continuous, clock-referenced access.
• Memory Organization & Capacity  128 Mbit capacity arranged as 4M × 32 across 4 banks (1M × 32 × 4 banks).
• Performance & Timing  -7 timing option supports 143 MHz clock frequency and CAS latency options of 2 or 3 clocks; access time from clock as low as 5.4 ns (CL=3).
• Burst & Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave) with burst termination via burst stop or autoprecharge.
• Refresh & Power Management  Auto Refresh (CBR) and Self Refresh supported; refresh counts per datasheet options (e.g., 4096 cycles per 16 ms or 64 ms depending on grade).
• Interface & Voltage  LVTTL-compatible interface with single 3.3 V supply (3.3 V ±0.3 V / 3.0 V–3.6 V specified supply range).
• Package & Temperature  Supplied in an 86-pin TSOP-II (0.400", 10.16 mm width) package; operating temperature range −40°C to +85°C (TA) for industrial-grade operation.

Typical Applications

• Industrial memory subsystems  Industrial embedded platforms that require 128 Mbit synchronous DRAM with an extended temperature range and stable 3.3 V operation.
• Embedded buffering and data pipelines  Systems that need clock-synchronous burst reads/writes and predictable CAS latencies for buffered data transfers.
• Commercial electronics  Consumer and commercial devices using parallel SDRAM for system memory or frame buffering where 143 MHz operation and programmable burst lengths are useful.

Unique Advantages

• Deterministic synchronous operation: Programmable CAS latency and clock-referenced signaling provide predictable timing for system integration.
• Configurable burst behavior: Programmable burst lengths and sequencing allow tailoring of read/write bursts to application data patterns.
• Robust refresh modes: Auto Refresh and Self Refresh support with defined refresh counts for sustained data retention across operating conditions.
• Single-rail power simplicity: 3.3 V single supply (3.0 V–3.6 V) simplifies power-rail design in multi-rail systems.
• Industrial temperature capability: Rated for −40°C to +85°C operation, supporting deployments in temperature-demanding environments.
• Space-efficient package: 86-pin TSOP-II (10.16 mm width) provides a compact footprint for board-level memory integration.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The IS45S32400E-7TLA1-TR combines a 4M × 32 quad-bank SDRAM organization with synchronous pipeline architecture to deliver configurable, clock-referenced memory performance for systems that require predictable timing and burst capability. Its support for programmable CAS latency, burst length/sequence, and refresh modes makes it suitable for designs that need flexible memory timing and reliable data retention.

This device is well suited for designers targeting 3.3 V memory subsystems in industrial and commercial applications where extended temperature range, compact TSOP-II packaging, and deterministic SDRAM behavior are important for system integration and long-term deployment.

If you require pricing, lead-time, or a formal quotation for IS45S32400E-7TLA1-TR, request a quote or submit a product inquiry to discuss availability and volume options.