IS45S32400F-6BLA2-TR
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 342 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S32400F-6BLA2-TR – IC DRAM 128MBIT PAR 90TFBGA
The IS45S32400F-6BLA2-TR is a 128 Mbit volatile memory device implemented as SDRAM and organized as 4M × 32. It provides a parallel memory interface in a 90‑TFBGA (8×13) package.
Key electrical and environmental characteristics include a rated clock frequency of 166 MHz, an access time of 5.4 ns, a supply range of 3.0 V to 3.6 V, and an operating temperature range of −40°C to 105°C (TA).
Key Features
- Memory Type & Capacity Volatile SDRAM with 128 Mbit total capacity organized as 4M × 32 words.
- Interface Parallel DRAM memory interface for direct integration with parallel memory controllers.
- Performance Rated clock frequency of 166 MHz and a specified access time of 5.4 ns.
- Power Supply Operates from 3.0 V to 3.6 V supply voltage.
- Package 90‑TFBGA package (8×13) suitable for board‑level mounting and compact designs.
- Operating Temperature Specified for operation from −40°C to 105°C (TA).
- Manufacturer Manufactured by ISSI (Integrated Silicon Solution Inc).
Typical Applications
- System Memory — Provides 128 Mbit of parallel SDRAM for designs requiring a 4M × 32 memory organization and a 3.0–3.6 V supply.
- Board-Level Memory Expansion — Used as a parallel DRAM device where a 90‑TFBGA (8×13) package and 128 Mbit capacity are appropriate.
- Temperature-Scoped Deployments — Suitable for applications that require operation across −40°C to 105°C (TA).
Unique Advantages
- Parallel SDRAM architecture: Straightforward integration with parallel memory controllers and existing DRAM interfaces.
- Deterministic timing specs: 166 MHz clock frequency and 5.4 ns access time provide defined timing characteristics for system design.
- Standard 3.0–3.6 V supply: Matches common 3 V system rails for compatibility with typical system power domains.
- Extended temperature rating: −40°C to 105°C (TA) supports deployments that require broad ambient temperature operation.
- Compact 90‑TFBGA package: 8×13 ball‑grid footprint for space-conscious board layouts.
Why Choose IC DRAM 128MBIT PAR 90TFBGA?
The IS45S32400F-6BLA2-TR positions itself as a straightforward parallel SDRAM option where a 128 Mbit capacity, defined timing (166 MHz clock, 5.4 ns access), and operation across a wide temperature range are required. Its 90‑TFBGA (8×13) package and 3.0–3.6 V supply range make it suitable for board‑level memory implementations that need a compact footprint and standard power domain compatibility.
This device is appropriate for engineers specifying a 4M × 32 organized volatile memory component from a known manufacturer (ISSI) when predictable timing, a parallel interface, and extended ambient temperature capability are design criteria.
Request a quote or contact sales to discuss availability, lead times, and pricing for the IS45S32400F-6BLA2-TR.
