IS45S32400E-6TLA1

The IS45S32400E-6TLA1 is a 128Mbit synchronous DRAM organized as 4M × 32 with a parallel interface and quad-bank internal architecture. It uses a pipelined, fully synchronous design to support high-speed data transfer in 3.3V memory systems.

Designed for systems requiring a compact board-level DRAM, the device offers programmable burst modes, selectable CAS latency, and standard 86-pin TSOP-II packaging to simplify integration into parallel memory subsystems operating across commercial and industrial temperature ranges.

Key Features

• Core / Architecture  Quad-bank synchronous DRAM internally organized as 1M × 32 × 4 banks for parallel access and bank-overlap operations.
• Memory Capacity & Organization  128 Mbit total capacity arranged as 4M × 32, suitable for 32-bit wide memory buses.
• Performance & Timing  Clock frequency up to 166 MHz (−6 speed grade) with programmable CAS latency (2 or 3 clocks) and access time as low as 5.4 ns for CL=3.
• Burst & Access Modes  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) with burst read/write and burst read/single write support.
• Refresh & Self-Maintenance  Auto refresh (CBR) and self-refresh supported; refresh rates of 4096 cycles per 16 ms (A2) or 64 ms (commercial/industrial/A1 options) as specified.
• Interface & Signaling  LVTTL-compatible parallel interface with all signals referenced to the positive clock edge for fully synchronous operation.
• Power  Single power supply operation at 3.0 V to 3.6 V (3.3 V ±0.3 V specified in the datasheet).
• Package & Temperature  Available in an 86-pin TSOP-II (86-TFSOP, 0.400" / 10.16 mm width) and rated for operating temperatures down to −40°C up to +85°C (industrial grade).

Typical Applications

• 3.3 V Memory Subsystems  Acts as board-level SDRAM in systems designed for a 3.3 V memory supply.
• Parallel Bus Designs  Provides 32-bit wide, parallel DRAM storage for designs requiring 4M × 32 organization and burst-access capability.
• Industrial Temperature Systems  Suitable for equipment operating across commercial and industrial ambient ranges (−40°C to +85°C).

Unique Advantages

• Flexible Burst Control: Programmable burst lengths and sequence options let designers optimize throughput and latency for varied access patterns.
• Selectable CAS Latency: CAS latency options (2 or 3 clocks) enable tuning of access timing to match system clocking and performance targets.
• High-Speed Synchronous Operation: Up to 166 MHz clocking with pipeline architecture supports rapid, predictable data transfer referenced to the clock edge.
• Integrated Refresh Support: Built-in auto refresh and self-refresh mechanisms simplify system refresh management and maintain data integrity.
• Industry-Grade Temperature Range: Specified operation from −40°C to +85°C to meet harsher ambient requirements.
• Standard TSOP-II Packaging: 86-pin TSOP-II footprint (10.16 mm width) for compact board-level implementation.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The IS45S32400E-6TLA1 combines a 128 Mbit synchronous DRAM organization with a quad-bank, pipelined architecture to deliver predictable, high-speed parallel memory for 3.3 V systems. Its programmable burst modes, selectable CAS latency, and integrated refresh features provide design flexibility for system-level timing and throughput requirements.

This device is well suited to engineers specifying 32-bit parallel DRAM in compact TSOP-II packages who require industrial temperature operation and configurable timing/refresh behavior. The combination of standard packaging, documented timing parameters, and multiple operating speed grades helps simplify integration and validation in board-level memory subsystems.

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