IS46DR16320E-25DBLA1
| Part Description |
IC DRAM 512MBIT PAR 84TWBGA |
|---|---|
| Quantity | 500 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Industrial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS46DR16320E-25DBLA1 – IC DRAM 512Mbit DDR2 SDRAM, 32M × 16, 84-TWBGA
The IS46DR16320E-25DBLA1 from ISSI is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It targets applications requiring mid-density, high-speed volatile memory with a 400 MHz clock capability and a compact BGA package.
This device offers deterministic timing characteristics (400 ps access time, 15 ns write cycle time for word page) and operates across a broad supply range of 1.7 V to 1.9 V and an ambient temperature range of −40°C to 85°C, making it suitable for systems that require defined electrical and thermal operating windows.
Key Features
- Memory Core 512 Mbit DDR2 SDRAM organized as 32M × 16 for parallel data storage and access.
- Performance 400 MHz clock frequency and 400 ps access time to support high-speed memory operations.
- Timing 15 ns write cycle time (word page) for predictable page write behavior.
- Power Operates from a 1.7 V to 1.9 V supply range.
- Package Available in 84-ball TFBGA / 84-TWBGA package (84-TWBGA listed as 8 × 12.5), suitable for compact board layouts.
- Temperature Range Specified operating ambient temperature from −40°C to 85°C (TA).
- Interface Parallel memory interface for DDR2 SDRAM system integration.
Unique Advantages
- Mid-density capacity: 512 Mbit organization (32M × 16) provides a balance between capacity and PCB area for embedded memory needs.
- Deterministic timing: 400 ps access time and 15 ns write cycle time enable predictable memory timing for system designers.
- Low-voltage operation: 1.7 V to 1.9 V supply range supports systems designed for DDR2 low-voltage signaling.
- Compact BGA packaging: 84-ball TFBGA / TWBGA package footprint minimizes board space while allowing high pin density.
- Extended operating temperature: −40°C to 85°C ambient range supports a wide array of temperature environments.
Why Choose IS46DR16320E-25DBLA1?
The IS46DR16320E-25DBLA1 positions itself as a straightforward DDR2 SDRAM option for designs that require a 512 Mbit parallel memory with defined timing and low-voltage operation. Its combination of 400 MHz clock capability, 400 ps access time, and a 15 ns word-page write cycle time provides predictable performance characteristics for system architects.
This device is suited to engineers and procurement teams looking for a compact, mid-density DDR2 memory solution with an extended ambient temperature range and compact BGA packaging. The clear electrical and timing specifications simplify integration and verification in memory subsystems.
Request a quote or submit an inquiry for the IS46DR16320E-25DBLA1 to receive pricing and availability information tailored to your volume and delivery requirements.
