IS46DR16320E-25DBLA2-TR

IC DRAM 512MBIT PAR 84TWBGA
Part Description

IC DRAM 512MBIT PAR 84TWBGA

Quantity 418 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package84-TWBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time400 psGradeAutomotive
Clock Frequency400 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS46DR16320E-25DBLA2-TR – IC DRAM 512MBIT PAR 84TWBGA

The IS46DR16320E-25DBLA2-TR is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface. It provides volatile DRAM storage with a 400 MHz clock frequency and is supplied in a compact 84-ball BGA package suitable for space-constrained board designs.

Key device characteristics include DDR2 memory technology, low-voltage operation (1.7 V to 1.9 V), a 400 ps access time, and an extended operating temperature range of -40°C to 105°C, making it suitable for systems that require stable DRAM performance across a wide temperature span.

Key Features

  • Memory Type & Organization Volatile DRAM implemented as DDR2 SDRAM with a 32M × 16 organization and a total memory size of 512 Mbit.
  • Performance Supports a 400 MHz clock frequency with a specified access time of 400 ps and a write cycle time (word page) of 15 ns.
  • Power Low-voltage operation with a supply range of 1.7 V to 1.9 V, enabling integration with low-voltage system domains.
  • Interface Parallel memory interface compatible with standard DDR2 memory signaling and timing requirements.
  • Package & Mounting Available in an 84-ball thin BGA package: Supplier device package listed as 84-TWBGA (8×12.5). Package case is specified as 84-TFBGA.
  • Operating Temperature Industrial temperature range from -40°C to 105°C (TA) for operation across varied environmental conditions.

Typical Applications

  • Embedded Systems — Provides parallel DDR2 DRAM storage for embedded designs requiring 512 Mbit memory capacity and standard DDR2 timing.
  • Industrial Equipment — Suitable for systems that need DRAM operation across a wide temperature range (-40°C to 105°C).
  • Compact Board-Level Memory — BGA packaging (84-ball, 8×12.5) supports small-footprint board layouts where space is constrained.

Unique Advantages

  • 400 MHz Clock Support: Enables DDR2 operation at rated clock frequency for designs specifying this timing.
  • 32M × 16 Organization: Provides a straightforward parallel memory architecture for systems designed around 16-bit data paths.
  • Low-Voltage Operation: 1.7 V to 1.9 V supply reduces system power domain requirements and supports low-voltage designs.
  • Extended Temperature Range: -40°C to 105°C rating supports deployment in environments with wide temperature variations.
  • Compact BGA Footprint: 84-ball TWBGA (8×12.5) package enables dense PCB integration and surface-mount assembly.

Why Choose IS46DR16320E-25DBLA2-TR?

The IS46DR16320E-25DBLA2-TR combines DDR2 memory architecture with a 32M × 16 organization and 512 Mbit capacity to deliver a predictable, parallel DRAM option for board-level memory needs. Its 400 MHz clock capability, 400 ps access time and 15 ns write cycle time address timing-sensitive designs while operating at a low voltage of 1.7 V to 1.9 V.

This device is suitable for engineers specifying compact BGA-mounted DRAM with an extended operating temperature range, offering a clear, verifiable set of electrical and mechanical characteristics for integration into production systems.

Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for the IS46DR16320E-25DBLA2-TR.

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