IS46DR16320E-25DBLA2-TR
| Part Description |
IC DRAM 512MBIT PAR 84TWBGA |
|---|---|
| Quantity | 418 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Automotive | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS46DR16320E-25DBLA2-TR – IC DRAM 512MBIT PAR 84TWBGA
The IS46DR16320E-25DBLA2-TR is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface. It provides volatile DRAM storage with a 400 MHz clock frequency and is supplied in a compact 84-ball BGA package suitable for space-constrained board designs.
Key device characteristics include DDR2 memory technology, low-voltage operation (1.7 V to 1.9 V), a 400 ps access time, and an extended operating temperature range of -40°C to 105°C, making it suitable for systems that require stable DRAM performance across a wide temperature span.
Key Features
- Memory Type & Organization Volatile DRAM implemented as DDR2 SDRAM with a 32M × 16 organization and a total memory size of 512 Mbit.
- Performance Supports a 400 MHz clock frequency with a specified access time of 400 ps and a write cycle time (word page) of 15 ns.
- Power Low-voltage operation with a supply range of 1.7 V to 1.9 V, enabling integration with low-voltage system domains.
- Interface Parallel memory interface compatible with standard DDR2 memory signaling and timing requirements.
- Package & Mounting Available in an 84-ball thin BGA package: Supplier device package listed as 84-TWBGA (8×12.5). Package case is specified as 84-TFBGA.
- Operating Temperature Industrial temperature range from -40°C to 105°C (TA) for operation across varied environmental conditions.
Typical Applications
- Embedded Systems — Provides parallel DDR2 DRAM storage for embedded designs requiring 512 Mbit memory capacity and standard DDR2 timing.
- Industrial Equipment — Suitable for systems that need DRAM operation across a wide temperature range (-40°C to 105°C).
- Compact Board-Level Memory — BGA packaging (84-ball, 8×12.5) supports small-footprint board layouts where space is constrained.
Unique Advantages
- 400 MHz Clock Support: Enables DDR2 operation at rated clock frequency for designs specifying this timing.
- 32M × 16 Organization: Provides a straightforward parallel memory architecture for systems designed around 16-bit data paths.
- Low-Voltage Operation: 1.7 V to 1.9 V supply reduces system power domain requirements and supports low-voltage designs.
- Extended Temperature Range: -40°C to 105°C rating supports deployment in environments with wide temperature variations.
- Compact BGA Footprint: 84-ball TWBGA (8×12.5) package enables dense PCB integration and surface-mount assembly.
Why Choose IS46DR16320E-25DBLA2-TR?
The IS46DR16320E-25DBLA2-TR combines DDR2 memory architecture with a 32M × 16 organization and 512 Mbit capacity to deliver a predictable, parallel DRAM option for board-level memory needs. Its 400 MHz clock capability, 400 ps access time and 15 ns write cycle time address timing-sensitive designs while operating at a low voltage of 1.7 V to 1.9 V.
This device is suitable for engineers specifying compact BGA-mounted DRAM with an extended operating temperature range, offering a clear, verifiable set of electrical and mechanical characteristics for integration into production systems.
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