IS46DR16320E-25DBLA1-TR
| Part Description |
IC DRAM 512MBIT PAR 84TWBGA |
|---|---|
| Quantity | 903 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Industrial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS46DR16320E-25DBLA1-TR – IC DRAM 512MBIT PAR 84TWBGA
The IS46DR16320E-25DBLA1-TR is a 512‑Mbit volatile DRAM device implemented as SDRAM – DDR2 with a parallel memory interface and a 32M × 16 organization. It provides high-speed synchronous memory access with a 400 MHz clock frequency and an access time of 400 ps.
Targeted for systems that require compact, high-frequency parallel DDR2 memory, the device combines a small BGA footprint with a low-voltage supply range to support designs operating across a wide temperature window.
Key Features
- Memory Architecture 32M × 16 organization delivering a total of 512 Mbit in a parallel DRAM format.
- Technology & Interface SDRAM – DDR2 technology with a parallel memory interface suitable for synchronous high-speed access.
- Performance 400 MHz clock frequency and 400 ps access time; write cycle time (word page) specified at 15 ns.
- Power Designed to operate from a 1.7 V to 1.9 V supply range to match low-voltage DDR2 system requirements.
- Package Available in an 84‑TWBGA package (84‑TWBGA (8×12.5) / 84‑TFBGA referenced) to support compact board layouts.
- Operating Temperature Specified for operation from −40°C to 85°C (TA), supporting a wide ambient range.
Typical Applications
- Parallel DDR2 memory subsystems Acts as 512 Mbit parallel DRAM in designs requiring 32M × 16 DDR2 storage.
- Compact board-level memory 84‑TWBGA package provides a small footprint for space-constrained systems needing DDR2 memory.
- Low-voltage designs 1.7 V to 1.9 V supply range fits systems optimized for reduced core memory voltage.
Unique Advantages
- High-frequency operation: 400 MHz clock support and 400 ps access time enable fast synchronous memory transactions.
- Dense 32M × 16 organization: Provides 512 Mbit capacity in a single device to simplify system memory architecture.
- Compact BGA footprint: 84‑TWBGA packaging minimizes board area for designs with tight space constraints.
- Low-voltage compatibility: 1.7 V–1.9 V supply range supports energy-conscious DDR2 system designs.
- Wide operating temperature: −40°C to 85°C rating supports deployment across a broad range of ambient conditions.
Why Choose IS46DR16320E-25DBLA1-TR?
The IS46DR16320E-25DBLA1-TR is positioned for applications that require compact, low-voltage DDR2 parallel memory with proven timing characteristics. Its 32M × 16 organization and 512 Mbit capacity deliver straightforward memory scaling while the 84‑TWBGA package helps conserve PCB area.
With a 400 MHz clock specification, 400 ps access time and an operating range from −40°C to 85°C, this device is suitable for designs that need consistent DDR2 performance and a small form factor packaging option.
Request a quote or submit an inquiry for IS46DR16320E-25DBLA1-TR to receive pricing and availability information tailored to your project requirements.
