IS46DR16320E-3DBLA1
| Part Description |
IC DRAM 512MBIT PAR 84TWBGA |
|---|---|
| Quantity | 66 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 450 ps | Grade | Industrial | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS46DR16320E-3DBLA1 – IC DRAM 512MBIT PAR 84TWBGA
The IS46DR16320E-3DBLA1 is a 512 Mbit volatile DRAM device implemented in DDR2 SDRAM technology with a parallel memory interface. It is organized as 32M × 16 and is designed to deliver DDR2-class operation with a 333 MHz clock frequency and fast access characteristics.
This device targets systems requiring mid-density, high-speed parallel DRAM memory in a compact BGA package, with supply operation in the 1.7 V to 1.9 V range and an operating ambient temperature range of −40 °C to 85 °C.
Key Features
- Memory Core 512 Mbit DRAM organized as 32M × 16, provided as a volatile memory format for temporary data storage.
- Technology DDR2 SDRAM architecture delivering synchronous double-data-rate operation.
- Performance 333 MHz clock frequency with an access time of 450 ps and a write cycle time (word page) of 15 ns for responsive memory transactions.
- Power Low-voltage supply range of 1.7 V to 1.9 V to match DDR2 system power rails.
- Interface & Organization Parallel memory interface suitable for systems using parallel DRAM modules; memory organization specified as 32M × 16.
- Package & Mechanical Package case listed as 84-TFBGA and supplier device package noted as 84-TWBGA (8 × 12.5 mm), providing a compact BGA footprint for board-level integration.
- Temperature Range Rated for ambient operation from −40 °C to 85 °C (TA).
Unique Advantages
- High-density DDR2 memory: 512 Mbit capacity in a 32M × 16 organization supports substantial on-board buffering and data storage within a compact footprint.
- DDR2 performance characteristics: 333 MHz clocking and 450 ps access time enable timely data access for systems designed around DDR2 timing.
- Low-voltage operation: 1.7 V–1.9 V supply compatibility aligns with DDR2 power domains for simpler power supply design.
- Compact BGA packaging: 84-ball BGA options (84-TFBGA / 84-TWBGA 8×12.5) reduce PCB area and support high-density system layouts.
- Wide ambient temperature rating: −40 °C to 85 °C support deployment in designs that require extended temperature operation.
Why Choose IC DRAM 512MBIT PAR 84TWBGA?
The IS46DR16320E-3DBLA1 positions itself as a mid-density DDR2 SDRAM device that combines compact packaging with DDR2-speed operation and low-voltage supply compatibility. Its 32M × 16 organization and parallel interface make it suitable for systems that require predictable DDR2 timing behavior and moderate memory capacity.
Designers and procurement teams looking for a 512 Mbit parallel DRAM solution will find clear, verifiable specifications here—clock frequency, access time, write cycle timing, supply range, package options, and operating temperature—useful for system-level integration and BOM planning.
If you require pricing, availability, or a formal quote for IS46DR16320E-3DBLA1, submit a request for a quote or contact sales to initiate the procurement process.
