IS46DR16320E-3DBLA2-TR
| Part Description |
IC DRAM 512MBIT PAR 84TWBGA |
|---|---|
| Quantity | 161 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 450 ps | Grade | Automotive | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS46DR16320E-3DBLA2-TR – 512 Mbit DDR2 SDRAM, 84-TWBGA
The IS46DR16320E-3DBLA2-TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It implements DDR2 SDRAM technology and supports synchronous operation up to a 333 MHz clock, making it suitable for systems that require a compact, synchronous DRAM device with defined timing and voltage characteristics.
Key operational parameters include a 1.7 V to 1.9 V supply range, a typical access time of 450 ps, and an operating ambient temperature range from −40 °C to 105 °C. The device is offered in an 84-ball BGA package (84-TFBGA / supplier device package 84-TWBGA, 8 × 12.5 mm footprint).
Key Features
- Memory Core / Organization 512 Mbit DDR2 SDRAM organized as 32M × 16, providing a parallel memory format for synchronous DRAM applications.
- Performance Supports a clock frequency of 333 MHz with an access time of 450 ps and a write cycle time (word page) of 15 ns for deterministic timing behavior.
- Power Operates from a 1.7 V to 1.9 V supply range, matching DDR2 low-voltage requirements.
- Package Available in an 84-ball BGA package (84-TFBGA) with supplier device package specified as 84-TWBGA (8 × 12.5 mm), enabling compact board-level integration.
- Thermal / Environmental Range Rated for an ambient operating temperature range of −40 °C to 105 °C (TA), accommodating a wide range of thermal environments.
Unique Advantages
- Defined DDR2 timing and throughput: Operates at up to 333 MHz clock frequency with 15 ns write cycle time and 450 ps access time for predictable synchronous memory behavior.
- Compact BGA footprint: 84-ball BGA packaging (supplier: 84-TWBGA, 8 × 12.5 mm) supports space-constrained board designs.
- Low-voltage operation: 1.7 V to 1.9 V supply range aligns with DDR2 low-voltage system rails to reduce power domain complexity.
- Broad operating temperature: −40 °C to 105 °C ambient rating supports deployment across extended-temperature applications.
- Straightforward memory geometry: 32M × 16 organization (512 Mbit) provides a clear mapping for system memory planning and address decoding.
Why Choose IS46DR16320E-3DBLA2-TR?
The IS46DR16320E-3DBLA2-TR positions itself as a specification-driven DDR2 SDRAM option for designs requiring a 512 Mbit parallel memory device with defined timing, low-voltage operation, and wide operating temperature. Its 32M × 16 organization, 333 MHz clock support, and 84-ball BGA packaging provide clear integration points for embedded and system-level memory subsystems.
This device is appropriate for engineers and procurement teams selecting a compact DDR2 memory component where adherence to the listed electrical, timing, and thermal specifications is required for system design and validation.
Request a quote or submit an inquiry to check availability and pricing for the IS46DR16320E-3DBLA2-TR.
