IS46R16160D-6BLA1

The IS46R16160D-6BLA1 is a 256 Mbit DDR SDRAM organized as 16M × 16 bits in a 60-TFBGA (8×13) package. It uses a double-data-rate architecture with SSTL_2-compatible I/O and differential clock inputs to deliver high-throughput parallel memory transfers.

This device targets systems that require compact, low-voltage DDR memory with programmable latency and burst features, and supports industrial operating temperatures from -40°C to 85°C.

Key Features

• Core / Architecture  Double-data-rate (DDR) SDRAM architecture enabling two data transfers per clock cycle with an internal DLL to align DQ/DQS and CK transitions.
• Memory Organization  256 Mbit capacity organized as 16M × 16 with four internal banks to allow concurrent bank operation.
• Performance  Clock frequency up to 166 MHz (speed grade -6), programmable CAS latencies of 2, 2.5 and 3, and burst lengths of 2, 4 and 8 for flexible throughput tuning.
• Data Timing  Bidirectional data strobe (DQS) transmitted/received with data; DQS edge-aligned on READs and center-aligned on WRITEs. Typical access time specified at 700 ps and write cycle time (word page) of 15 ns.
• Interface  Parallel memory interface with SSTL_2-compatible I/O, differential clock inputs (CK/ CK̄), and data mask (DM) for masked write operations.
• Power  VDD and VDDQ nominal 2.5 V (2.5 V ± 0.2 V), operating range 2.3 V to 2.7 V for low-voltage system designs.
• Refresh & Reliability  Supports Auto Refresh and Self Refresh modes plus Auto Precharge and TRAS lockout for standard DRAM maintenance and reliability.
• Package & Temperature  60-ball TFBGA (8×13) package; specified operating temperature range -40°C to +85°C (TA).

Typical Applications

• System Memory  Used as on-board DDR memory where a 256 Mbit, 16-bit parallel DDR interface is required for general-purpose system buffering.
• High-Speed Data Buffering  Employed where double-data-rate transfers and programmable burst/latency settings are used to match throughput requirements up to 166 MHz.
• FPGA/ASIC Interfaces  Suitable for attachment to parallel DDR memory controllers in FPGA or ASIC designs that require SSTL_2-compatible I/O and differential clocking.
• Industrial Electronics  Applicable in designs that require operation across an industrial temperature range (-40°C to +85°C) with compact BGA packaging.

Unique Advantages

• Low-voltage operation: Supports VDD/VDDQ of 2.5 V ±0.2 V (2.3 V–2.7 V), enabling lower power supply requirements in system designs.
• Flexible performance tuning: Programmable CAS latency (2 / 2.5 / 3) and selectable burst lengths (2, 4, 8) let designers balance latency and throughput to match application needs.
• SSTL_2-compatible I/O and differential clock: Ensures signal-level compatibility with SSTL_2 memory interfaces and differential clocking for reliable high-speed transfers.
• Compact BGA footprint: 60-TFBGA (8×13) package provides a small board area for space-constrained applications while maintaining a parallel DDR interface.
• Standard DRAM maintenance features: Auto Refresh, Self Refresh and Auto Precharge support simplify memory management and reliability in continuous-operation environments.

Why Choose IS46R16160D-6BLA1?

The IS46R16160D-6BLA1 positions itself as a compact, low-voltage 256 Mbit DDR SDRAM solution for designs requiring parallel DDR memory with configurable latency and burst behavior. Its SSTL_2-compatible interface, differential clocking, and four-bank architecture provide the timing and protocol features expected in DDR SDRAM implementations.

This device is well suited to engineers specifying on-board DDR memory in compact packages, particularly where industrial temperature operation and standard DRAM features (Auto/Self Refresh, Auto Precharge) are required for reliable system operation over the specified voltage and temperature ranges.

For pricing, availability, or to request a quote for IS46R16160D-6BLA1, please submit a request with the part number and your quantity and delivery requirements.