IS46R16160D-6TLA2

The IS46R16160D-6TLA2 is a 256 Mbit DDR SDRAM device organized as 16M × 16 with a parallel memory interface in a 66‑pin TSOP‑II package. It implements a double‑data‑rate architecture with pipeline operation and four internal banks to support continuous read/write burst transfers.

Its feature set — including SSTL_2‑compatible I/O, programmable CAS latency, and support for burst lengths of 2, 4 and 8 — targets designs that require a mid‑density parallel DDR memory solution with configurable timing and compact packaging.

Key Features

• Memory Core  256 Mbit DRAM organized as 16M × 16 with four internal banks for concurrent operation and pipeline access.
• DDR Architecture  Double‑data‑rate operation with two data transfers per clock cycle and data strobe (DQS) transmitted/received for read/write capture.
• Timing and Performance  Support for programmable CAS latency (2, 2.5, 3), burst lengths 2/4/8, and burst type sequential or interleave; typical clock frequency listed at 166 MHz and access time 700 ps.
• Interface and Signaling  SSTL_2 compatible I/O, differential clock inputs (CK and ÌCK), DLL alignment of DQ/DQS with clock, and data mask (DM) for write masking at both edges of DQS.
• Power  VDD and VDDQ specified at 2.5 V ± 0.2 V with supply operating range 2.3 V to 2.7 V.
• Refresh and Power Modes  Auto Refresh and Self Refresh modes supported; Auto Precharge and TRAS lockout (tRAP = tRCD) provided.
• Package & Temperature  66‑pin TSOP‑II package (0.400", 10.16 mm width) with operating ambient temperature range −40 °C to +105 °C (TA).
• Write and Cycle Timing  Write cycle time (word/page) of 15 ns and timing parameters compliant with device speed grades.

Typical Applications

• Embedded memory subsystems  Provides mid‑density parallel DDR storage for systems that require a 256 Mbit volatile memory block with configurable latency and burst behavior.
• Board‑level memory expansion  Used as on‑board DRAM where SSTL_2 signaling and a compact 66‑TSOP‑II footprint are required to fit space‑constrained PCB layouts.
• Performance‑tuned designs  Suitable for designs that leverage programmable CAS latency, burst length and DLL timing to optimize read/write throughput.

Unique Advantages

• Double‑data‑rate throughput: Two data transfers per clock cycle increase effective bandwidth without changing clock rate.
• Flexible timing control: Programmable CAS latency (2, 2.5, 3) and selectable burst lengths (2, 4, 8) let designers tune latency and burst behavior to system needs.
• SSTL_2‑compatible I/O: Standard signaling compatibility simplifies integration with SSTL_2 host interfaces.
• Compact package: 66‑pin TSOP‑II (10.16 mm width) delivers a smaller board footprint for space‑constrained applications.
• Wide operating range: Supply range of 2.3 V to 2.7 V and ambient operation from −40 °C to +105 °C support varied environmental conditions.
• Concurrent bank operation: Four internal banks and pipeline architecture enable near‑continuous burst read/write sequences for sustained data movement.

Why Choose IS46R16160D-6TLA2?

The IS46R16160D-6TLA2 delivers a focused combination of DDR performance, selectable timing options and a compact TSOP‑II package for designs that need a 256 Mbit parallel DRAM solution. Its SSTL_2 signaling, DLL timing alignment and support for multiple burst/latency modes make it suitable for systems where predictable timing and integration with standard DDR hosts are important.

This device is aimed at engineers specifying a mid‑density, configurable DDR SDRAM for board‑level memory subsystems that require a well‑documented timing feature set, compact package, and an extended ambient operating range.

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