IS46R16160D-6TLA2-TR

The IS46R16160D-6TLA2-TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 66‑TSSOP II package. It implements a double-data-rate architecture with internal pipelining and four internal banks to support continuous read/write burst operations.

Designed for systems that require compact, high‑speed volatile memory, this device offers configurable burst lengths and CAS latency settings, SSTL_2 compatible I/O and differential clock inputs to support synchronized, high-throughput memory transfers.

Key Features

• Memory Core 256 Mbit DDR SDRAM organized as 16M × 16 with four internal banks for concurrent operation and pipelined read/write bursts.
• Double‑Data‑Rate Architecture Two data transfers per clock cycle with edge‑aligned/centre‑aligned DQS behavior for read and write operations respectively; DLL aligns DQ/DQS to CK.
• Performance & Timing Clock frequency up to 166 MHz (part -6 speed grade), access time 700 ps and write cycle time (word page) of 15 ns. Programmable CAS latency options: 2, 2.5 and 3.
• Burst & Command Flexibility Burst length selectable at 2, 4 or 8 with sequential and interleave burst types; commands registered on positive CK edge, data referenced to both edges of DQS.
• Interface & Signal Integrity SSTL_2 compatible I/O, differential clock inputs (CK/CK̅) and data strobe (DQS) for robust timing and capture of bidirectional data transfers.
• Refresh & Power Modes Supports Auto Refresh and Self Refresh modes plus Auto Precharge and TRAS lockout (tRAP = tRCD) for memory maintenance and retention control.
• Supply & Temperature Operating voltage range 2.3 V to 2.7 V (VDD/VDDQ 2.5 V ±0.2 V). Operating temperature range −40 °C to +105 °C (TA).
• Package 66‑pin TSOP‑II / 66‑TSSOP (0.400", 10.16 mm width) compact package for space‑constrained board designs.

Unique Advantages

• High throughput DDR transfers: Double‑data‑rate architecture and DQS support enable two data transfers per clock cycle for denser data movement within the same clock period.
• Configurable latency and bursts: Programmable CAS latencies and selectable burst lengths (2/4/8) let designers tune timing for specific system tradeoffs between latency and sustained bandwidth.
• Improved timing stability: DLL, differential clock inputs and SSTL_2 I/O improve signal alignment and capture reliability for high‑speed interfaces.
• Concurrent bank operation: Four internal banks allow overlapping commands and bursts to increase effective throughput for burst‑oriented workloads.
• Wide operating range: Support for −40 °C to +105 °C operation and a 2.3–2.7 V supply range accommodates designs that require extended temperature tolerance and standard DDR supply levels.
• Compact form factor: 66‑TSSOP II package provides a small board footprint for embedded and space‑limited applications.

Why Choose IS46R16160D-6TLA2-TR?

The IS46R16160D-6TLA2-TR combines a 256 Mbit DDR SDRAM architecture with programmable timing, robust signal features and a compact 66‑TSSOP II package to deliver a balance of performance and board area efficiency. Its SSTL_2 I/O, differential clocking and DLL support make it suitable for designs that require precise timing and sustained burst transfers.

This device is a practical choice for engineers seeking volatile DDR memory with flexible latency and burst configurations, support for Auto/Self Refresh modes, and an extended operating temperature range for more demanding environments.

Request a quote or submit an inquiry to evaluate IS46R16160D-6TLA2-TR for your next design project and to obtain commercial pricing and availability information.