IS46R16160F-5TLA1-TR
| Part Description |
IC DRAM 256MBIT PAR 66TSOP II |
|---|---|
| Quantity | 788 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS46R16160F-5TLA1-TR – IC DRAM 256MBIT PAR 66TSOP II
IS46R16160F-5TLA1-TR is a 256 Mbit DDR SDRAM device organized as 16M × 16 with a parallel memory interface. The device implements DDR SDRAM architecture and is supplied in a 66‑TSOP II (66‑TSSOP) package.
Key device attributes include a 200 MHz clock frequency, 700 ps access time, a 15 ns write cycle time (word/page), a 2.3 V to 2.7 V supply range, and an ambient operating temperature range of −40°C to 85°C.
Key Features
- Memory Core — DDR SDRAM organized as 16M × 16 delivering 256 Mbit of volatile storage.
- Performance — Specified 200 MHz clock frequency with 700 ps access time and 15 ns write cycle time (word/page).
- Interface — Parallel memory interface suitable for standard DRAM bus topologies.
- Power — Operates from a 2.3 V to 2.7 V supply range.
- Package — 66‑TSSOP (66‑TSOP II) package with 0.400" (10.16 mm) body width for board-level integration.
- Operating Temperature — Rated for −40°C to 85°C ambient (TA).
- Memory Format — Volatile DRAM, 256 Mbit capacity.
Unique Advantages
- Defined DDR performance: 200 MHz clock and 700 ps access time provide clear timing characteristics for system timing design.
- Low-voltage operation: 2.3 V to 2.7 V supply range enables integration into lower-voltage memory subsystems.
- Compact package: 66‑TSSOP (66‑TSOP II) package with 10.16 mm width supports dense board layouts.
- Predictable timing: 15 ns write cycle time (word/page) assists in deterministic memory cycle planning.
- Wide ambient range: −40°C to 85°C rating supports designs that require extended temperature operation.
- Simplified memory mapping: 16M × 16 organization provides a consistent address/data layout for system integration.
Why Choose IS46R16160F-5TLA1-TR?
IS46R16160F-5TLA1-TR positions itself as a straightforward 256 Mbit DDR SDRAM option where defined DDR timing, low-voltage operation and a compact 66‑TSSOP footprint are required. Its documented clock, access and cycle timing parameters support predictable integration into parallel DRAM designs.
The device is suitable for designs requiring a 16M × 16 DRAM organization with a 2.3 V–2.7 V supply and an ambient operating range of −40°C to 85°C, offering a balance of density, electrical characteristics and packaging for board-level memory implementations.
Request a quote or submit an inquiry for IS46R16160F-5TLA1-TR to receive pricing and availability information.
