IS46R16160F-5BLA1

IC DRAM 256MBIT PAR 60TFBGA
Part Description

IC DRAM 256MBIT PAR 60TFBGA

Quantity 1,812 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package60-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeIndustrial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS46R16160F-5BLA1 - 256Mbit DDR SDRAM

The IS46R16160F-5BLA1 is a 256-megabit DDR SDRAM memory device featuring a 16M x 16 organization, designed to deliver high-speed data access for embedded systems and industrial applications. Operating at a 200 MHz clock frequency with 7ns access time, this parallel interface DRAM provides reliable volatile memory storage in a compact 60-pin TFBGA package. With an extended temperature range of -40°C to 85°C, this memory solution is engineered for demanding environments where consistent performance is critical.

Key Features

  • Memory Configuration - 256Mbit capacity organized as 16M x 16, providing flexible data width for efficient system integration.
  • High-Speed Performance - 200 MHz clock frequency with 7ns access time and 15ns write cycle time enables rapid data throughput for time-sensitive applications.
  • Power Efficiency - Operates on 2.3V to 2.7V supply voltage, supporting low-power design requirements in battery-operated and energy-conscious systems.
  • Extended Temperature Range - Rated for -40°C to 85°C operation, ensuring reliable performance across industrial temperature conditions.
  • Compact Package - 60-pin TFBGA (8x13mm) footprint minimizes board space while maintaining robust signal integrity.
  • DDR SDRAM Technology - Double data rate architecture maximizes bandwidth utilization by transferring data on both clock edges.

Typical Applications

  • Industrial Control Systems - This DDR SDRAM provides fast, temporary data storage for PLCs and process control equipment where the extended temperature rating ensures continuous operation in factory floor environments.
  • Embedded Computing - The 256Mbit capacity and parallel interface make this memory suitable for embedded processors and microcontrollers that require high-speed working memory for data buffering and program execution.
  • Test and Measurement Equipment - High-speed access times support data acquisition systems and instrumentation that need to capture and process signals in real-time without bottlenecks.
  • Communications Infrastructure - Network routers and switches benefit from the fast write cycle times for packet buffering and forwarding operations in data-intensive networking environments.
  • Automotive Electronics - The wide operating temperature range makes this SDRAM appropriate for automotive infotainment systems and dashboard displays that must function reliably across varying climate conditions.

Unique Advantages

  • Reduced System Latency: The 7ns access time minimizes memory wait states, allowing processors to maintain higher throughput and responsiveness.
  • Simplified Power Management: Standard 2.3V to 2.7V operation eliminates the need for additional voltage regulators in many 2.5V or 3.3V system designs.
  • Improved Thermal Reliability: The -40°C to 85°C temperature rating eliminates the need for active cooling in many industrial applications, reducing system complexity and failure points.
  • Space-Efficient Design: The compact 8x13mm TFBGA footprint enables higher memory density on constrained PCB layouts compared to larger package options.
  • Flexible Integration: Parallel interface with 16M x 16 organization provides compatibility with a wide range of processors and memory controllers without complex interfacing.
  • Enhanced Data Throughput: DDR technology doubles effective bandwidth compared to single data rate SDRAM, improving performance for data-intensive tasks without increasing clock frequency.

Why Choose IS46R16160F-5BLA1?

The IS46R16160F-5BLA1 offers a proven DDR SDRAM solution for engineers designing systems that require dependable volatile memory in challenging operating conditions. Its combination of 200 MHz performance, extended temperature tolerance, and compact packaging makes it particularly well-suited for industrial and embedded applications where space constraints and environmental factors are design considerations. The parallel interface provides straightforward integration with existing memory controllers while the 256Mbit capacity offers sufficient working memory for a wide range of embedded computing tasks.

For applications demanding reliable high-speed memory with extended temperature operation, this ISSI DDR SDRAM delivers consistent performance backed by established SDRAM technology. The device's active lifecycle status ensures long-term availability for production designs requiring stable supply chains.

Contact Us for Pricing and Availability

To learn more about the IS46R16160F-5BLA1 or request a quote for your project, contact our sales team. We can assist with technical specifications, volume pricing, and delivery schedules to support your design requirements.

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