IS46R16160D-6BLA2-TR

The IS46R16160D-6BLA2-TR is a 256 Mbit DDR SDRAM organized as 16M × 16, delivered in a 60-TFBGA (8×13) package. It implements a double-data-rate architecture with pipeline access and four internal banks to support continuous read/write burst operations.

Designed for parallel DDR memory subsystems, the device supports SSTL_2 compatible I/O, differential clock inputs, and programmable timing options to meet a range of high-speed memory interface requirements within a 2.3 V to 2.7 V supply window and an operating temperature range of −40°C to +105°C.

Key Features

• Memory Architecture — 256 Mbit DRAM organized as 16M × 16 with four internal banks to enable concurrent operations and burst access.
• Double-Data-Rate Operation — DDR pipeline architecture provides two data transfers per clock cycle with data strobe (DQS) used for capture; DQS is edge-aligned for reads and centre-aligned for writes.
• Clock and Timing — Differential clock inputs (CK/CK̄) and an internal DLL to align DQ/DQS with clock transitions; programmable CAS latency options (2, 2.5, 3) and burst lengths of 2, 4, and 8.
• Interface Compatibility — SSTL_2 compatible I/O signaling; commands registered on positive clock edges and data referenced to both edges of DQS for high-speed parallel interfacing.
• Electrical and Timing Specs — Supply voltage range 2.3 V to 2.7 V (VDD/VDDQ nominal 2.5 V ±0.2 V); clock frequency up to ~166 MHz (speed grade -6); access time 700 ps; write cycle time (word page) 15 ns.
• Burst and Refresh Features — Supports auto refresh and self refresh modes, auto precharge, TRAS lockout, and data mask (DM) that masks write data on both edges of DQS.
• Package and Temperature — 60-ball TFBGA (8×13) package; operating temperature range −40°C to +105°C (TA).

Typical Applications

• Parallel DDR memory subsystems — Acts as 256 Mbit parallel DDR SDRAM for designs requiring a 16M × 16 organization and burst-capable memory banks.
• Burst data buffering — Suitable where continuous read/write burst accesses and programmable CAS latency are needed for high-throughput buffering.
• High-speed interface modules — Fits systems requiring SSTL_2 compatible I/O and differential clock inputs for synchronized parallel data transfers.

Unique Advantages

• Parallel DDR architecture: Two data transfers per clock cycle and four internal banks enable sustained burst throughput and overlapping operations.
• Flexible timing: Programmable CAS latencies (2, 2.5, 3) and selectable burst lengths (2, 4, 8) let designers tune performance and latency to system needs.
• SSTL_2 compatible I/O and differential clocking: Ensures compatibility with standard DDR signaling and reliable clock/data alignment via DLL and DQS behavior.
• Robust electrical envelope: Wide supply range (2.3 V–2.7 V) and specified access/write timing (700 ps access, 15 ns write cycle) support a range of board-level designs.
• Compact BGA package: 60-TFBGA (8×13) reduces PCB footprint while providing a parallel 16-bit data interface.
• Extended temperature support: Rated for operation from −40°C to +105°C (TA), supporting designs with broad environmental requirements.

Why Choose IS46R16160D-6BLA2-TR?

The IS46R16160D-6BLA2-TR offers a balanced combination of DDR performance, configurable timing, and a compact 60-ball TFBGA package for parallel memory subsystems. Its DDR pipeline, DQS-driven data capture, and four-bank organization make it suitable for designs that require burstable, low-latency memory with SSTL_2 signaling.

This device is appropriate for engineers specifying a 256 Mbit parallel DDR SDRAM with programmable latency, differential clocking, and a 2.3 V–2.7 V operating window, delivering predictable electrical and timing characteristics for medium-density memory implementations.

Request a quote or submit a pricing inquiry for IS46R16160D-6BLA2-TR to obtain availability and lead-time information for your design or purchasing evaluation.