IS46R16160D-5TLA1-TR

The IS46R16160D-5TLA1-TR is a 256 Mbit DDR SDRAM device from Integrated Silicon Solution Inc (ISSI) organized as 16M × 16 with a parallel memory interface. It implements double-data-rate architecture with a pipeline and four internal banks to support high-speed burst read/write operations and concurrent bank activity.

Targeted at systems that require volatile, high-throughput memory, the device delivers up to 200 MHz clock operation, SSTL_2 compatible I/O, programmable CAS latencies, and support for auto-refresh and self-refresh modes for reliable operation across -40°C to +85°C.

Key Features

• Core architecture  Double-data-rate (DDR) pipeline design enabling two data transfers per clock cycle and four internal banks for concurrent operations.
• Memory organization  256 Mbit capacity arranged as 16M × 16, providing a 16-bit data path and internal banked structure for efficient burst access.
• Performance  Supports up to 200 MHz clock frequency (speed grade -5) with an access time of 700 ps and write cycle time (word/page) of 15 ns for high-throughput applications.
• Interfaces and I/O  SSTL_2 compatible I/O, differential clock inputs (CK/CK̄), and bidirectional data strobe (DQS) for edge-aligned READ and centre-aligned WRITE capture.
• Timing and programmability  Programmable CAS latencies of 2, 2.5 and 3; burst lengths of 2, 4 and 8; burst type selectable between sequential and interleave modes.
• Refresh and power modes  Auto Refresh and Self Refresh modes plus Auto Precharge; VDD and VDDQ nominal 2.5V (2.3V–2.7V supply range).
• Package and mounting  Supplied in a 66-pin TSOP-II (66-TSSOP) package with 0.400" (10.16 mm) width for surface-mount assembly.
• Operating temperature  Industrial temperature range specified at -40°C to +85°C (TA).

Typical Applications

• High-speed data buffering  Use where high-throughput burst reads/writes are required; DDR architecture and pipeline operation support continuous burst transfers.
• Embedded memory subsystems  Suitable for embedded platforms needing a 16-bit parallel DDR memory with programmable CAS latency and selectable burst lengths.
• Systems with extended temperature requirements  Applicable in designs requiring reliable DDR operation across -40°C to +85°C.

Unique Advantages

• Double-data-rate transfers: Two data transfers per clock cycle increase effective bandwidth without raising clock frequency.
• SSTL_2 compatible I/O: Ensures compatibility with SSTL_2 signaling environments for predictable interface behavior.
• Flexible timing and bursts: Programmable CAS latencies and selectable burst lengths allow tuning for system trade-offs between latency and throughput.
• Banked architecture: Four internal banks enable concurrent operations and reduce effective access contention for bursty workloads.
• Industrial temperature rating: Specified operation from -40°C to +85°C supports deployment in temperature-sensitive applications.
• Compact surface-mount package: 66-TSSOP package provides a low-profile, PCB-friendly footprint for space-constrained designs.

Why Choose IS46R16160D-5TLA1-TR?

The IS46R16160D-5TLA1-TR combines DDR pipeline architecture, programmable timing, and SSTL_2 I/O in a 256 Mbit, 16-bit parallel configuration to meet the needs of systems that demand burst-capable volatile memory. Its 200 MHz speed grade, four-bank organization and refresh/self-refresh support make it suitable for designs that prioritize steady high-throughput and predictable timing behavior.

Manufactured by ISSI and available in a 66-pin TSOP-II package with industrial temperature range and a 2.3V–2.7V supply window, this device is appropriate for engineers seeking a compact DDR SDRAM solution with configurable latency and burst options for embedded and high-performance memory subsystems.

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