IS46R16160D-5TLA1

The IS46R16160D-5TLA1 is a 256Mbit DDR SDRAM device organized as 16M × 16 with a parallel memory interface. It implements a double-data-rate pipeline architecture with internal banked memory to deliver continuous burst reads and writes and high-throughput data transfer.

Designed for systems requiring compact, low-voltage DDR memory, this device offers a 66‑pin TSOP‑II package, programmable latency and burst options, and an industrial operating range to support robust embedded and electronic designs.

Key Features

• Memory Core and Organization  256Mbit DDR SDRAM organized as 16M × 16 with four internal banks to support concurrent operations and burst accesses.
• Double-Data-Rate Architecture  Two data transfers per clock cycle with data strobe (DQS) transmitted/received with data; DQS edge-aligned for READs and centre-aligned for WRITEs.
• Performance  Maximum clock frequency up to 200 MHz (speed grade -5) with an access time of 700 ps and a word page write cycle time of 15 ns for high-rate burst transfers.
• Programmability and Burst Control  Burst lengths of 2, 4 and 8, selectable burst type (sequential or interleave) and programmable CAS latency options (2, 2.5 and 3) to match system timing requirements.
• Clocking and Timing  Differential clock inputs (CK and CK̄) with internal DLL to align DQ/DQS transitions to clock edges; commands registered on positive CK edge and data referenced to both edges of DQS.
• Interface Compatibility  SSTL_2 compatible I/O and data mask (DM) that masks write data on both rising and falling edges of the data strobe.
• Power  VDD and VDDQ at 2.5V ±0.2V (specified supply range 2.3V–2.7V) for low-voltage operation.
• Refresh and Reliability  Supports Auto Refresh and Self Refresh modes plus Auto Precharge; TRAS Lockout supported (tRAP = tRCD) to manage row timing.
• Package and Temperature  66‑TSSOP (66‑TSOP II) package (0.400", 10.16 mm width) and specified operating temperature range of −40°C to +85°C (TA).

Typical Applications

• Embedded systems  Provides a compact 256Mbit DDR memory option for embedded designs requiring parallel DDR SDRAM in a 66‑TSOP II footprint.
• Consumer and industrial electronics  Suitable for electronic modules that need low-voltage DDR SDRAM with programmable latency and burst modes to match system timing.
• Memory expansion in compact boards  Fits board-level memory expansion where a 16M × 16 parallel DDR device in a small TSOP‑II package is required.

Unique Advantages

• Dual-data-rate throughput: Double-data-rate architecture enables two data transfers per clock cycle for higher effective bandwidth.
• Flexible timing configuration: Programmable CAS latencies (2, 2.5, 3) and selectable burst lengths (2/4/8) allow tuning to system performance and latency needs.
• Low-voltage operation: Specified VDD/VDDQ at 2.5V ±0.2V (supply range 2.3–2.7V) reduces overall power compared with higher-voltage memories.
• Compact package: 66‑TSOP II package (10.16 mm width) provides a small-footprint option for space-constrained PCBs.
• Robust timing and refresh features: DLL alignment, data strobe handling (DQS), Auto/Self Refresh and Auto Precharge support reliable data integrity in continuous burst operation.
• Banked architecture: Four internal banks enable concurrent operations to improve effective throughput for burst and pipelined accesses.

Why Choose IS46R16160D-5TLA1?

The IS46R16160D-5TLA1 combines DDR SDRAM performance with flexible timing and burst control in a compact 66‑TSOP II package. Its 16M × 16 organization, support for programmable CAS latency and multiple burst lengths, plus SSTL_2 I/O compatibility, make it suitable for designs that require adaptable, high-throughput parallel memory at low voltage.

This device is well suited to engineers and procurement teams specifying board-level DDR memory for embedded and electronic systems where package size, operating temperature (−40°C to +85°C) and configurable timing are key considerations.

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