IS46DR16320E-3DBLA1-TR

IC DRAM 512MBIT PAR 84TWBGA
Part Description

IC DRAM 512MBIT PAR 84TWBGA

Quantity 4 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package84-TWBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time450 psGradeIndustrial
Clock Frequency333 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS46DR16320E-3DBLA1-TR – 512 Mbit DDR2 SDRAM (84-TWBGA)

The IS46DR16320E-3DBLA1-TR is a volatile DDR2 SDRAM device providing 512 Mbit of parallel memory organized as 32M × 16. It implements a parallel DDR2 memory interface with a specified clock frequency of 333 MHz and is supplied in an 84-TWBGA (8 × 12.5 mm) package.

This device is targeted for system designs that require on-board parallel DDR2 DRAM with defined timing and electrical characteristics, including a write cycle time of 15 ns and a supply voltage range of 1.7 V to 1.9 V. The device supports operation across an ambient temperature range of −40 °C to 85 °C (TA).

Key Features

  • Memory Architecture 512 Mbit capacity organized as 32M × 16, delivering parallel DRAM storage in a single device.
  • Technology & Interface DDR2 SDRAM technology with a parallel memory interface tailored for DDR2 system designs.
  • Performance Specified clock frequency of 333 MHz, typical access time of 450 ps, and a write cycle time (word/page) of 15 ns to support timing-driven designs.
  • Power Operates from a supply voltage range of 1.7 V to 1.9 V, enabling compatibility with DDR2 voltage domains.
  • Package 84-TWBGA package (8 × 12.5 mm) for compact board-level integration.
  • Operating Temperature Rated for ambient operation from −40 °C to 85 °C (TA), suitable for a wide thermal envelope.
  • Memory Type Volatile DRAM intended for dynamic system memory applications.

Unique Advantages

  • 512 Mbit density in a single device: Provides a 32M × 16 organization that simplifies board-level memory population and layout.
  • Defined DDR2 timing: 333 MHz clocking, 450 ps access time, and 15 ns write cycle time supply concrete timing parameters for deterministic system design.
  • Low-voltage DDR2 operation: 1.7 V to 1.9 V supply range aligns with DDR2 power domains to control power rail requirements.
  • Compact BGA footprint: 84-TWBGA (8 × 12.5 mm) package minimizes PCB area for dense designs.
  • Extended ambient range: −40 °C to 85 °C (TA) operation supports designs that require broader temperature tolerance.

Why Choose IS46DR16320E-3DBLA1-TR?

The IS46DR16320E-3DBLA1-TR combines a 512 Mbit DDR2 SDRAM architecture with defined electrical and timing specifications to support systems that require parallel DDR2 memory at a 333 MHz clock rate. Its 32M × 16 organization, low-voltage supply window, and compact 84-TWBGA package make it appropriate for board-level memory implementations where clear performance and package parameters are required.

This device is suitable for designers and procurement teams seeking a documented DDR2 DRAM component with specified access and cycle timing, a stated operating temperature range, and a compact BGA footprint for integration into aggregated memory subsystems.

Request a quote or contact sales to discuss availability, lead times, and volume pricing for the IS46DR16320E-3DBLA1-TR.

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