IS46DR16320E-3DBLA1-TR
| Part Description |
IC DRAM 512MBIT PAR 84TWBGA |
|---|---|
| Quantity | 4 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 450 ps | Grade | Industrial | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS46DR16320E-3DBLA1-TR – 512 Mbit DDR2 SDRAM (84-TWBGA)
The IS46DR16320E-3DBLA1-TR is a volatile DDR2 SDRAM device providing 512 Mbit of parallel memory organized as 32M × 16. It implements a parallel DDR2 memory interface with a specified clock frequency of 333 MHz and is supplied in an 84-TWBGA (8 × 12.5 mm) package.
This device is targeted for system designs that require on-board parallel DDR2 DRAM with defined timing and electrical characteristics, including a write cycle time of 15 ns and a supply voltage range of 1.7 V to 1.9 V. The device supports operation across an ambient temperature range of −40 °C to 85 °C (TA).
Key Features
- Memory Architecture 512 Mbit capacity organized as 32M × 16, delivering parallel DRAM storage in a single device.
- Technology & Interface DDR2 SDRAM technology with a parallel memory interface tailored for DDR2 system designs.
- Performance Specified clock frequency of 333 MHz, typical access time of 450 ps, and a write cycle time (word/page) of 15 ns to support timing-driven designs.
- Power Operates from a supply voltage range of 1.7 V to 1.9 V, enabling compatibility with DDR2 voltage domains.
- Package 84-TWBGA package (8 × 12.5 mm) for compact board-level integration.
- Operating Temperature Rated for ambient operation from −40 °C to 85 °C (TA), suitable for a wide thermal envelope.
- Memory Type Volatile DRAM intended for dynamic system memory applications.
Unique Advantages
- 512 Mbit density in a single device: Provides a 32M × 16 organization that simplifies board-level memory population and layout.
- Defined DDR2 timing: 333 MHz clocking, 450 ps access time, and 15 ns write cycle time supply concrete timing parameters for deterministic system design.
- Low-voltage DDR2 operation: 1.7 V to 1.9 V supply range aligns with DDR2 power domains to control power rail requirements.
- Compact BGA footprint: 84-TWBGA (8 × 12.5 mm) package minimizes PCB area for dense designs.
- Extended ambient range: −40 °C to 85 °C (TA) operation supports designs that require broader temperature tolerance.
Why Choose IS46DR16320E-3DBLA1-TR?
The IS46DR16320E-3DBLA1-TR combines a 512 Mbit DDR2 SDRAM architecture with defined electrical and timing specifications to support systems that require parallel DDR2 memory at a 333 MHz clock rate. Its 32M × 16 organization, low-voltage supply window, and compact 84-TWBGA package make it appropriate for board-level memory implementations where clear performance and package parameters are required.
This device is suitable for designers and procurement teams seeking a documented DDR2 DRAM component with specified access and cycle timing, a stated operating temperature range, and a compact BGA footprint for integration into aggregated memory subsystems.
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