IS46R16160F-6BLA1-TR

The IS46R16160F-6BLA1-TR is a 256 Mbit volatile DRAM device from ISSI, implemented as a 16M × 16 parallel SDRAM (DDR) memory. It delivers parallel DDR memory architecture in a compact 60‑TFBGA (8×13) package for designs that require moderate-density, board-mounted DRAM.

Key electrical and timing characteristics provided include a clock frequency of 166 MHz, an access time of 700 ps, a write cycle time (word page) of 15 ns, and an operating supply range of 2.3 V to 2.7 V. The device is specified for ambient operating temperatures from −40°C to 85°C (TA).

Key Features

• Memory Architecture  256 Mbit DRAM organized as 16M × 16, implemented as SDRAM – DDR with a parallel memory interface.
• Performance  Rated clock frequency of 166 MHz and an access time of 700 ps provide deterministic timing for parallel DDR memory applications; write cycle time (word page) is 15 ns.
• Power  Operates from a supply voltage range of 2.3 V to 2.7 V, enabling operation within the specified low-voltage window.
• Package  Supplied in a 60‑TFBGA (8×13) package suitable for surface-mount assembly and compact board layouts.
• Temperature Range  Specified for operation from −40°C to 85°C (TA), supporting a wide ambient temperature envelope.
• Mounting & Format  Volatile DRAM format intended for board-level mounting in systems requiring parallel DDR memory.

Typical Applications

• Parallel DDR Memory Requirements  For designs that require a 256 Mbit parallel DDR SDRAM device with defined timing parameters and supply range.
• Board-Level Memory Expansion  Suitable as on‑board DRAM where a compact 60‑TFBGA package and 16‑bit data organization are required.
• Temperature-Range Sensitive Designs  Applicable in systems operating across −40°C to 85°C that need a specified operating temperature envelope.

Unique Advantages

• Parallel DDR Architecture: Provides a 16M × 16 SDRAM – DDR organization for applications requiring parallel memory access and predictable timing.
• Clear Timing Specifications: Documented 166 MHz clock frequency, 700 ps access time, and 15 ns write cycle time allow straightforward timing budgeting during system design.
• Low-Voltage Operation: 2.3 V to 2.7 V supply range supports designs targeting reduced supply rail voltages compared to older memories.
• Compact Surface-Mount Package: 60‑TFBGA (8×13) package offers a small footprint for constrained board layouts while retaining required signal density.
• Wide Ambient Temperature Range: −40°C to 85°C rating enables use across a broad set of environmental conditions without additional thermal derating information.
• ISSI Device: Manufactured by Integrated Silicon Solution Inc (ISSI), providing product traceability to a known memory supplier.

Why Choose IC DRAM 256MBIT PAR 60TFBGA?

The IS46R16160F-6BLA1-TR positions itself as a straightforward, specification-driven 256 Mbit parallel DDR SDRAM option for board-level memory needs. Its combination of 16M × 16 organization, defined timing (166 MHz clock, 700 ps access), and a compact 60‑TFBGA package makes it suitable for designs that require a precise, documented DRAM building block.

This device is appropriate for engineers and procurement teams seeking a documented, manufacturer‑supplied DDR SDRAM component with a defined voltage window and ambient temperature rating. The clear electrical and package specifications help with system integration, layout planning, and thermal/voltage budgeting.

If you need a quote or additional purchasing information for the IS46R16160F-6BLA1-TR, submit a request or contact sales to obtain pricing and lead-time details.