IS46R16160F-6TLA1-TR

The IS46R16160F-6TLA1-TR is a 256 Mbit volatile DRAM implemented as 16M × 16 organization using SDRAM - DDR technology with a parallel memory interface. It delivers high-speed, temporary data storage suitable for digital systems that require compact, board-level dynamic memory.

Designed for integration on populated PCBs, the device combines a 166 MHz clock capability, low-voltage operation, and a 66‑TSOP II package to address space-constrained applications across industrial and embedded platforms.

Key Features

• Memory Core 256 Mbit DRAM organized as 16M × 16, providing parallel data paths for system memory and buffering.
• Technology & Interface SDRAM - DDR technology with a parallel memory interface for synchronous operation.
• Performance 166 MHz clock frequency, 700 ps access time and a 15 ns write cycle time (word page) to support high-speed data transactions.
• Power Operates from a 2.3 V to 2.7 V supply range to support low-voltage system designs.
• Package 66‑TSOP II (66‑TSSOP, 0.400" / 10.16 mm width) package footprint for compact board-level integration.
• Environmental Range Specified for an operating ambient temperature range of −40 °C to 85 °C (TA).
• Memory Type & Mounting Volatile DRAM intended for surface-mounted PCB assembly.

Typical Applications

• Temporary system memory Used as transient storage for program and data buffering in digital subsystems that require high-speed read/write cycles.
• Data buffering Suitable for buffering high-throughput data paths where 166 MHz synchronous operation and fast access time improve throughput.
• Embedded module memory Compact 66‑TSOP II package enables integration into space-constrained embedded boards and modules.

Unique Advantages

• High-speed synchronous operation: 166 MHz clock rate and 700 ps access time support fast data access and throughput for time-sensitive designs.
• Low-voltage compatibility: 2.3 V to 2.7 V supply range accommodates low-power system architectures.
• Compact package footprint: 66‑TSOP II package provides a small form factor for dense PCB layouts.
• Wide operating temperature: −40 °C to 85 °C rating enables use across a broad range of ambient environments.
• Parallel 16‑bit organization: 16M × 16 layout offers straightforward interfacing for parallel memory systems.

Why Choose IC DRAM 256MBIT PAR 66TSOP II?

The IS46R16160F-6TLA1-TR positions itself as a compact, high-speed parallel DRAM solution for designs that require reliable volatile memory in a small package. Its combination of DDR SDRAM technology, 166 MHz operation, and a 66‑TSOP II footprint makes it suitable for embedded and board-level memory expansion where space and performance are key considerations.

Engineers specifying this device benefit from low-voltage operation and a wide ambient temperature range, supporting robust integration into a variety of digital systems while maintaining predictable electrical and timing characteristics defined in the product specification.

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