IS46R16320D-5BLA1

The IS46R16320D-5BLA1 is a 512‑Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 60‑TFBGA (8×13) package. It uses a double‑data‑rate pipeline architecture with four internal banks to enable continuous read/write burst accesses and programmable timing options.

Designed for systems that require a 512‑Mbit DDR memory solution, this device delivers SSTL_2 compatible I/O, differential clocking, and a 2.5–2.7 V supply range with an operating temperature of −40°C to +85°C.

Key Features

• Memory Core  512 Mbit DDR SDRAM, internally organized as four banks (32M × 16) to support concurrent operations and pipelined read/write bursts.
• Double‑Data‑Rate Architecture  Two data transfers per clock cycle with DLL alignment; DQS is edge‑aligned for READs and centre‑aligned for WRITEs, enabling reliable data capture on both edges.
• Performance  Clock frequency up to 200 MHz (Fck Max, CL = 3), access time of 700 ps, and write cycle time (word page) of 15 ns for burst‑oriented transfers.
• Programmable Timing & Burst  Supports burst lengths of 2, 4 and 8, sequential and interleave burst types, and programmable CAS latencies of 2, 2.5 and 3.
• Interface & I/O  Parallel memory interface with SSTL_2 compatible I/O, differential clock inputs (CK and /CK), and bidirectional data strobe (DQS) for synchronized data transfer.
• Refresh & Power Modes  Auto Refresh and Self Refresh modes plus Auto Precharge and Data Mask (DM) support to mask write data on both DQS edges.
• Supply Options  VDD and VDDQ supply options per device speed grade (2.5 V ±0.2 V and 2.6 V ±0.1 V); typical device supply range listed as 2.5 V to 2.7 V.
• Package & Temperature  60‑TFBGA (8×13) ball count and industrial operating temperature range of −40°C to +85°C (TA).

Typical Applications

• Board‑level system memory  Use as a 512‑Mbit DDR memory device where a 32M × 16 organization and parallel DDR interface are required.
• High‑speed burst buffering  Suited for designs that leverage burst reads/writes and programmable CAS latency to match system timing.
• Memory subsystems with SSTL_2 I/O  Integrates into platforms requiring SSTL_2 compatible signaling and differential clock inputs for synchronized data capture.

Unique Advantages

• DDR pipeline architecture: Enables continuous read/write bursts and efficient throughput through internal bank interleaving.
• Synchronized data capture: Bidirectional DQS and DLL alignment with differential clock inputs ensure data timing integrity on both edges.
• Flexible timing options: Programmable CAS latencies and selectable burst lengths allow designers to tune performance to system requirements.
• Wide operating range: 2.5 V–2.7 V supply support and −40°C to +85°C operating temperature provide suitability for industrial temperature applications.
• Compact package: 60‑TFBGA (8×13) footprint provides high density for space‑constrained board designs.

Why Choose IS46R16320D-5BLA1?

The IS46R16320D-5BLA1 is positioned as a compact, configurable 512‑Mbit DDR SDRAM solution for designs that require pipelined burst performance, SSTL_2 compatible I/O, and differential clocking. Its programmable burst and latency options, combined with four internal banks and DLL‑aligned data paths, offer design flexibility for a range of memory subsystem requirements.

This device is well suited to engineers and procurement teams seeking a verified 32M × 16 DDR memory component with industrial temperature support, a 60‑TFBGA package, and supply options aligned to standard DDR signaling levels.

To request a quote or submit a sourcing inquiry for IS46R16320D-5BLA1, please reach out with your required quantity and delivery timeframe so we can provide pricing and availability details.