IS46R16320D-5BLA1-TR

The IS46R16320D-5BLA1-TR is a 512‑Mbit DDR SDRAM device organized as 32M × 16 and supplied in a 60‑TFBGA (8 × 13) package. It implements a double‑data‑rate architecture with SSTL_2 compatible I/O and a parallel memory interface for high‑rate data transfers and burst operation.

This device is targeted for system memory and high‑speed buffering roles where a 512‑Mbit DDR solution with programmable latency, burst modes, and industrial temperature operation is required.

Key Features

• Memory Core  512 Mbit DDR SDRAM organized as 32M × 16 with four internal banks to support concurrent operations and burst transfers.
• DDR Architecture  Double‑data‑rate operation provides two data transfers per clock cycle; differential clock inputs (CK and CK̄) and DLL alignment of DQ/DQS to clock transitions are supported.
• Data Strobe and Mask  Bidirectional data strobe (DQS) is transmitted/received with data (edge‑aligned for READs, centre‑aligned for WRITEs); Data Mask (DM) masks write data on both edges of DQS.
• Programmable Timing and Burst  Burst lengths of 2, 4 and 8; sequential and interleave burst types; programmable CAS latency options of 2, 2.5 and 3.
• Performance  Maximum clock frequency up to 200 MHz (speed grade -5, CL = 3) and access time specified at 700 ps; write cycle time (word/page) 15 ns.
• Voltage and I/O  VDD and VDDQ supply range 2.5 V to 2.7 V with SSTL_2 compatible I/O signalling.
• Power Management and Refresh  Supports Auto Refresh and Self Refresh modes and Auto Precharge for memory management.
• Package and Temperature  60‑ball TFBGA (8 × 13) package; industrial operating temperature range of −40 °C to +85 °C (TA).

Typical Applications

• Memory subsystem components  Acts as a 512‑Mbit DDR working memory element in designs that require parallel DDR SDRAM with programmable latency and burst operation.
• High‑speed buffering  Suitable for buffering and temporary data storage tasks where double‑data‑rate transfers and sub‑nanosecond access timing are needed.
• Industrial equipment  Use in systems that require operation across −40 °C to +85 °C and a 2.5–2.7 V supply for robust field performance.

Unique Advantages

• Double‑data‑rate transfers: Two data transfers per clock cycle increase effective bandwidth without increasing clock frequency.
• Flexible timing and burst control: Programmable CAS latencies and selectable burst lengths (2/4/8) enable tuning for system latency and throughput tradeoffs.
• SSTL_2 compatible I/O and differential clock: Standard SSTL_2 signalling and differential CK/CK̄ inputs facilitate integration into common DDR memory interfaces.
• Industrial temperature capability: Rated for −40 °C to +85 °C to support applications requiring extended ambient range.
• Compact BGA package: 60‑TFBGA (8 × 13) package provides a low‑profile, board‑level solution for space‑constrained designs.

Why Choose IC DRAM 512MBIT PAR 60TFBGA?

The IS46R16320D-5BLA1-TR delivers a 512‑Mbit DDR SDRAM building block with programmable latency, burst options, and SSTL_2 I/O compatibility for designs that require predictable high‑speed memory behavior. Its 32M × 16 organization, four internal banks, and DLL‑assisted timing alignment support continuous read/write bursts and flexible memory control.

This device is well suited to designers and procurement teams specifying parallel DDR SDRAM for systems that demand a 2.5–2.7 V supply range and industrial operating temperatures. The compact 60‑TFBGA package and explicit timing parameters make it straightforward to evaluate for board‑level memory subsystems where bandwidth, timing control, and thermal range are primary considerations.

Request a quote or contact sales to discuss availability, lead times, and how the IS46R16320D-5BLA1-TR fits your next memory subsystem design.