IS46R16320F-5BLA1-TR

IC DRAM 512MBIT PAR 60TFBGA
Part Description

IC DRAM 512MBIT PAR 60TFBGA

Quantity 552 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package60-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeAutomotive
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceSSTL_2Memory Organization32M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceN/AREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNN/AHTS CodeN/A

Overview of IS46R16320F-5BLA1-TR – IC DRAM 512MBIT PAR 60TFBGA

The IS46R16320F-5BLA1-TR is a 512 Mbit DDR SDRAM organized as 32M × 16, designed for systems requiring synchronous DRAM with an SSTL_2 interface. It implements DDR SDRAM technology and supports a clock frequency of 200 MHz with an access time of 700 ps.

With an operating voltage range of 2.3 V to 2.7 V, AEC-Q100 qualification and an operating temperature range of −40°C to 85°C, this device targets designs that require automotive-grade reliability and robust thermal performance in a compact 60‑TFBGA (8×13) package.

Key Features

  • Memory Core  512 Mbit DRAM organized as 32M × 16, implemented as synchronous DDR SDRAM for standard volatile memory storage.
  • Performance & Timing  Supports a clock frequency of 200 MHz with an access time of 700 ps and a write cycle time (word page) of 15 ns to meet timing requirements for DDR memory subsystems.
  • Interface & Voltage  SSTL_2 memory interface compatible with a supply voltage range of 2.3 V to 2.7 V, providing the electrical levels expected for DDR implementations.
  • Reliability & Qualification  AEC-Q100 qualified and specified for an ambient operating temperature range of −40°C to 85°C, supporting automotive-grade reliability needs.
  • Package  60‑TFBGA (8×13) ball‑grid array package for compact board-level integration in space-constrained designs.
  • Memory Format & Mounting  Volatile DRAM format suitable for systems that require transient data storage with standard surface-mount assembly.

Typical Applications

  • Automotive Electronics  AEC-Q100 qualification and −40°C to 85°C rating make this DDR SDRAM suitable for automotive control modules and in-vehicle systems requiring robust memory.
  • Embedded Systems  512 Mbit density and SSTL_2 interface support embedded platforms that need mid-density DDR memory for runtime data and buffering.
  • Industrial Control  Operating temperature range and AEC-Q100 qualification align with industrial modules that require reliable volatile memory under variable environmental conditions.

Unique Advantages

  • AEC-Q100 Qualified: Explicit AEC-Q100 qualification confirms the device meets recognized automotive component standards for reliability.
  • Automotive Temperature Range: Specified operation from −40°C to 85°C supports deployment in temperature-sensitive automotive and industrial applications.
  • Compact 60‑TFBGA Package: The 8×13 TFBGA footprint enables high-density board layouts while maintaining ball-grid array mounting for robust connections.
  • SSTL_2 Interface & DDR Technology: Industry-standard SSTL_2 signaling and DDR SDRAM architecture provide predictable interfacing and timing for memory subsystems.
  • Mid-Level Performance: 200 MHz clock and 700 ps access time deliver defined performance characteristics for systems requiring deterministic memory timing.

Why Choose IC DRAM 512MBIT PAR 60TFBGA?

The IS46R16320F-5BLA1-TR positions itself as a purpose-built 512 Mbit DDR SDRAM solution for designers who need automotive-qualified volatile memory with defined performance and thermal characteristics. Its combination of AEC-Q100 qualification, −40°C to 85°C operating range, and SSTL_2 interface makes it appropriate for embedded, automotive, and industrial designs that require verified component reliability.

This part is suited to engineers and procurement teams looking for a compact 60‑TFBGA packaged DDR memory device with clear electrical and timing specifications (2.3 V–2.7 V supply, 200 MHz clock, 700 ps access time) to integrate into systems where predictable DDR behavior and vendor-supported qualification are required.

Please request a quote or submit an inquiry to obtain pricing, lead-time, and availability information for IS46R16320F-5BLA1-TR.

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