IS46R16320F-5BLA1-TR
| Part Description |
IC DRAM 512MBIT PAR 60TFBGA |
|---|---|
| Quantity | 552 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Automotive | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | SSTL_2 | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | N/A | HTS Code | N/A |
Overview of IS46R16320F-5BLA1-TR – IC DRAM 512MBIT PAR 60TFBGA
The IS46R16320F-5BLA1-TR is a 512 Mbit DDR SDRAM organized as 32M × 16, designed for systems requiring synchronous DRAM with an SSTL_2 interface. It implements DDR SDRAM technology and supports a clock frequency of 200 MHz with an access time of 700 ps.
With an operating voltage range of 2.3 V to 2.7 V, AEC-Q100 qualification and an operating temperature range of −40°C to 85°C, this device targets designs that require automotive-grade reliability and robust thermal performance in a compact 60‑TFBGA (8×13) package.
Key Features
- Memory Core 512 Mbit DRAM organized as 32M × 16, implemented as synchronous DDR SDRAM for standard volatile memory storage.
- Performance & Timing Supports a clock frequency of 200 MHz with an access time of 700 ps and a write cycle time (word page) of 15 ns to meet timing requirements for DDR memory subsystems.
- Interface & Voltage SSTL_2 memory interface compatible with a supply voltage range of 2.3 V to 2.7 V, providing the electrical levels expected for DDR implementations.
- Reliability & Qualification AEC-Q100 qualified and specified for an ambient operating temperature range of −40°C to 85°C, supporting automotive-grade reliability needs.
- Package 60‑TFBGA (8×13) ball‑grid array package for compact board-level integration in space-constrained designs.
- Memory Format & Mounting Volatile DRAM format suitable for systems that require transient data storage with standard surface-mount assembly.
Typical Applications
- Automotive Electronics AEC-Q100 qualification and −40°C to 85°C rating make this DDR SDRAM suitable for automotive control modules and in-vehicle systems requiring robust memory.
- Embedded Systems 512 Mbit density and SSTL_2 interface support embedded platforms that need mid-density DDR memory for runtime data and buffering.
- Industrial Control Operating temperature range and AEC-Q100 qualification align with industrial modules that require reliable volatile memory under variable environmental conditions.
Unique Advantages
- AEC-Q100 Qualified: Explicit AEC-Q100 qualification confirms the device meets recognized automotive component standards for reliability.
- Automotive Temperature Range: Specified operation from −40°C to 85°C supports deployment in temperature-sensitive automotive and industrial applications.
- Compact 60‑TFBGA Package: The 8×13 TFBGA footprint enables high-density board layouts while maintaining ball-grid array mounting for robust connections.
- SSTL_2 Interface & DDR Technology: Industry-standard SSTL_2 signaling and DDR SDRAM architecture provide predictable interfacing and timing for memory subsystems.
- Mid-Level Performance: 200 MHz clock and 700 ps access time deliver defined performance characteristics for systems requiring deterministic memory timing.
Why Choose IC DRAM 512MBIT PAR 60TFBGA?
The IS46R16320F-5BLA1-TR positions itself as a purpose-built 512 Mbit DDR SDRAM solution for designers who need automotive-qualified volatile memory with defined performance and thermal characteristics. Its combination of AEC-Q100 qualification, −40°C to 85°C operating range, and SSTL_2 interface makes it appropriate for embedded, automotive, and industrial designs that require verified component reliability.
This part is suited to engineers and procurement teams looking for a compact 60‑TFBGA packaged DDR memory device with clear electrical and timing specifications (2.3 V–2.7 V supply, 200 MHz clock, 700 ps access time) to integrate into systems where predictable DDR behavior and vendor-supported qualification are required.
Please request a quote or submit an inquiry to obtain pricing, lead-time, and availability information for IS46R16320F-5BLA1-TR.