IS46R16320F-6TLA2

IC DRAM 512MBIT PAR 66TSOP II
Part Description

IC DRAM 512MBIT PAR 66TSOP II

Quantity 153 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package66-TSOP IIMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeAutomotive
Clock Frequency166 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceSSTL_2Memory Organization32M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNN/AHTS CodeN/A

Overview of IS46R16320F-6TLA2 – IC DRAM 512MBIT PAR 66TSOP II

The IS46R16320F-6TLA2 is a 512 Mbit DDR SDRAM device organized as 32M × 16. It provides high-density, volatile memory in a compact 66‑TSSOP (66‑TSOP II) package for embedded applications.

With a 166 MHz clock frequency, 700 ps access time and SSTL_2 interface, this AEC‑Q100 qualified, automotive‑grade DRAM is intended for systems requiring dependable DDR performance across a wide operating temperature range of −40°C to 105°C.

Key Features

  • Core / Memory 512 Mbit DDR SDRAM organized as 32M × 16 to support high-density memory needs.
  • Performance Rated clock frequency of 166 MHz with an access time of 700 ps and a write cycle time (word page) of 15 ns for deterministic DDR operation.
  • Interface SSTL_2 memory interface for standard DDR signaling compatibility.
  • Power Supply voltage range of 2.3 V to 2.7 V to match system-level DDR power domains.
  • Package 66‑TSSOP (0.400", 10.16 mm width) package (66‑TSOP II) for space‑efficient board integration.
  • Reliability & Qualification AEC‑Q100 qualified and specified for an operating temperature range of −40°C to 105°C, supporting automotive and other high‑reliability environments.

Typical Applications

  • Automotive Systems Automotive‑grade DDR memory for body electronics, infotainment buffers or other in-vehicle modules requiring AEC‑Q100 qualified components.
  • Industrial Embedded Control Memory for embedded controllers and industrial systems that demand wide temperature operation and reliable DDR storage.
  • Communication & Networking Equipment Local DDR storage in network modules and interfaces where SSTL_2 signaling and 166 MHz clocking are applicable.

Unique Advantages

  • AEC‑Q100 Qualification: Explicit automotive qualification supports use in automotive and other high‑reliability applications.
  • Wide Temperature Range: Specified −40°C to 105°C operation for robust performance in harsh environments.
  • Compact High‑Density Package: 66‑TSSOP (10.16 mm width) packaging offers a high memory density with a small PCB footprint.
  • Fast DDR Performance: 166 MHz clock and 700 ps access time provide responsive volatile storage for time‑sensitive tasks.
  • SSTL_2 Interface: Standard SSTL_2 signaling simplifies integration with compatible DDR systems.
  • Flexible Supply Range: 2.3 V to 2.7 V supply accommodates common DDR voltage domains.

Why Choose IS46R16320F-6TLA2?

The IS46R16320F-6TLA2 combines automotive‑grade qualification, industry‑standard DDR signaling and a compact 66‑TSSOP footprint to deliver a reliable 512 Mbit volatile memory option for embedded designs. Its performance characteristics—166 MHz clocking, 700 ps access time and 15 ns write cycle time—support systems that require predictable DDR behavior.

This device is suitable for designers specifying AEC‑Q100 qualified components and for projects that need a balance of density, package size and operating temperature robustness. It offers a straightforward integration path into systems using SSTL_2 interfaces and common DDR supply voltages.

If you would like pricing, availability, or to request a quote for the IS46R16320F-6TLA2, please submit a request or contact sales for further assistance.

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