IS46R86400D-6TLA1-TR

The IS46R86400D-6TLA1-TR is a 512‑Mbit DDR SDRAM organized as 64M × 8, implementing a double‑data‑rate pipeline architecture for high‑speed parallel memory access. The device provides burst read/write capability with programmable CAS latency and internal bank-based concurrency to support systems that require sustained, high‑throughput memory operations.

Designed for applications demanding parallel DDR SDRAM functionality, the device combines SSTL_2 compatible I/O, a DLL, and differential clock inputs to support reliable timing and data capture across a wide operating temperature range.

Key Features

• Core Architecture Double‑data‑rate (DDR) pipeline architecture delivering two data transfers per clock cycle; DLL aligns DQ and DQS transitions with clock.
• Memory Organization & Capacity 512 Mbit total capacity, internally organized as 64M × 8 with four internal banks for concurrent operations.
• Data I/O and Timing Bidirectional data strobe (DQS) transmitted/received with data; DQS is edge‑aligned for reads and centre‑aligned for writes. Commands are registered on each positive clock edge.
• Burst and Latency Options Burst length selectable 2, 4 or 8 with sequential and interleave burst types; programmable CAS latency options: 2, 2.5 and 3.
• Clock & Timing Performance Differential clock inputs (CK/ /CK) and specified maximum clock frequency of 166 MHz (typical -6 grade 167 MHz), with access time down to 700 ps and a 15 ns write cycle time (word page).
• Power VDD and VDDQ support operation within the 2.3 V to 2.7 V range (device speed grade -6 specified as 2.5 V ±0.2 V in datasheet).
• SSTL_2 Compatible I/O All I/Os are SSTL_2 compatible to match standard DDR signalling requirements.
• Refresh and Power Modes Auto Refresh and Self Refresh supported; Auto Precharge and Data Mask (DM) available to control write operations.
• Package and Mounting Available in a 66‑pin TSOP‑II (66‑TSSOP, 0.400" / 10.16 mm width) package for board‑level mounting.
• Operating Temperature Industrial operating range of -40°C to +85°C (TA).

Typical Applications

• High‑throughput memory buffers — Provides burstable DDR storage for systems that need sustained parallel data transfer and low‑latency access.
• Embedded systems with parallel DDR interface — Fits designs requiring a 512 Mbit DDR SDRAM device with SSTL_2 I/O and differential clocking.
• Data acquisition and buffering — Supports applications that benefit from four internal banks and programmable burst/latency settings to manage continuous read/write streams.

Unique Advantages

• Parallel DDR performance: Double‑data‑rate pipeline design enables two transfers per clock cycle for higher effective bandwidth.
• Flexible timing control: Programmable CAS latency (2 / 2.5 / 3) and selectable burst lengths offer tuning for system timing and throughput.
• Robust data capture: DQS timing (edge‑aligned reads, center‑aligned writes) with DLL and differential clock inputs improves data timing integrity.
• Industry temperature support: Specified operation from -40°C to +85°C for deployment in industrial temperature environments.
• Compact board footprint: 66‑TSSOP (TSOP‑II) package provides a small form factor for space‑constrained PCB designs.
• SSTL_2 I/O compatibility: Ensures compatibility with SSTL_2 signaling domains used in DDR systems.

Why Choose IC DRAM 512MBIT PAR 66TSOP II?

The IS46R86400D-6TLA1-TR delivers a focused DDR SDRAM solution where 512 Mbit capacity, burstable DDR transfers and flexible timing are required. Its combination of SSTL_2 I/O, DLL timing alignment, differential clocking and selectable latency/burst modes makes it suitable for designs that need predictable, high‑speed parallel memory behavior.

This device is appropriate for engineers specifying a compact, industrial‑temperature DDR memory device in a 66‑pin TSOP‑II package, offering configurable timing and refresh options to match a range of system memory architectures.

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