K4S510432D-UC75

IC DRAM 512MBIT LVTTL 54TSOP II
Part Description

IC DRAM 512MBIT LVTTL 54TSOP II

Quantity 225 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerSamsung Semiconductor, Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time65 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization128M x 4
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceUnknownREACH ComplianceREACH not applicable
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IC DRAM 512MBIT LVTTL 54TSOP II – 512 Mbit LVTTL SDRAM in 54‑pin TSOP II

The K4S510432D-UC75 is a 512 Mbit SDRAM device organized as 128M × 4 with an LVTTL interface, supplied in a 54‑pin TSOP II package. It is designed for commercial‑temperature applications and targets systems requiring standard 3.3 V SDRAM memory with PC133 timing.

This component is suitable for embedded and electronic designs that need synchronous DRAM memory with a 133 MHz clockability, a default CAS latency configuration, and a compact 54‑TSOP footprint for board‑level integration.

Key Features

  • Memory Core SDRAM volatile memory, 512 Mbit capacity organized as 128M × 4 with 4 banks as specified for the 512Mb D‑die family.
  • Performance & Timing PC133 class operation with a clock frequency rating of 133 MHz and default CAS latency (CL=3). Access time specified at 65 ns.
  • Interface & Power LVTTL memory interface with supply voltage range 3.0 V to 3.6 V (noted as 3.3 ± 0.3 V in device documentation).
  • Refresh & Organization 8K refresh cycle per 64 ms as indicated for the 512 Mbit D‑die devices; organized for synchronous burst operation typical of SDRAMs.
  • Package 54‑pin TSOP (TSOP II) package, 0.400" (10.16 mm) width, suitable for compact board layouts.
  • Temperature Range Commercial operating temperature range of 0°C to 70°C (TA).

Typical Applications

  • Embedded Systems Used as system DRAM where a compact 54‑pin package and LVTTL interface are required for memory expansion or buffering.
  • Consumer Electronics Suitable for commercial‑temperature consumer designs that implement PC133‑class SDRAM for data buffering and working memory.
  • Industrial Control Applicable where 3.3 V SDRAM is needed within the 0°C to 70°C operating range for control and monitoring functions.

Unique Advantages

  • Standard LVTTL Interface: Simplifies integration with systems designed for 3.3 V LVTTL memory signaling.
  • PC133 Timing Compatibility: 133 MHz clock rating and default CL=3 timing make the device compatible with PC133‑class SDRAM timing domains.
  • Compact TSOP II Package: 54‑pin TSOP II footprint helps reduce board area while providing full SDRAM functionality.
  • Commercial Temperature Operation: 0°C to 70°C rating aligns with typical commercial application requirements.
  • Documented Refresh and Bank Architecture: 8K/64 ms refresh and 4‑bank organization provide predictable memory management for system designers.

Why Choose K4S510432D-UC75?

The K4S510432D-UC75 offers a straightforward 512 Mbit SDRAM option with LVTTL signaling, PC133 timing, and a compact 54‑pin TSOP II package. Its documented supply range (3.0–3.6 V), access time, and refresh parameters make it suitable for commercial embedded designs that require established SDRAM behavior and predictable timing.

This device is appropriate for designers and procurement teams specifying standard SDRAM memory modules for products operating within commercial temperature limits, where board space and straightforward LVTTL interfacing are priorities.

Request a quote or contact sales to discuss availability, lead times, and pricing for K4S510432D-UC75.

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