K4S510432D-UC75T00

IC DRAM 512MBIT LVTTL 54TSOP II
Part Description

IC DRAM 512MBIT LVTTL 54TSOP II

Quantity 1,365 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerSamsung Semiconductor, Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time65 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization128M x 4
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceUnknownREACH ComplianceREACH not applicable
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IC DRAM 512MBIT LVTTL 54TSOP II – 512 Mbit SDRAM, LVTTL, 54‑pin TSOP II

The IC DRAM 512MBIT LVTTL 54TSOP II is a volatile SDRAM device with a memory organization of 128M × 4, providing 512 Mbit of DRAM storage in a 54‑pin TSOP(II) package. It implements an LVTTL interface and is specified for commercial temperature operation.

Key practical characteristics available from the device include a 133 MHz clock frequency (PC133), 65 ns access time, 8K/64 ms refresh, and a 3.0 V to 3.6 V supply range, making it suitable for board‑level DRAM density expansion where these electrical and mechanical specs match system requirements.

Key Features

  • Memory Architecture 512 Mbit SDRAM organized as 128M × 4 with 4 banks (device series designation indicates 4‑bank SDRAM).
  • Interface LVTTL interface (3.3 V signaling) for standard logic‑level memory interfacing.
  • Speed & Timing Clock frequency specified at 133 MHz (PC133) with an access time of 65 ns; ordering code speed grade corresponds to PC133 timing.
  • Refresh 8K refresh cycles per 64 ms as indicated in the SDRAM product guide.
  • Power Supply voltage range of 3.0 V to 3.6 V consistent with 3.3 V systems.
  • Package & Mounting 54‑pin TSOP (0.400", 10.16 mm width) — TSOP(II) package format and listed as lead‑free in the component product guide; surface‑mount device.
  • Operating Temperature Commercial temperature range: 0 °C to 70 °C (TA).

Unique Advantages

  • Standard LVTTL signaling: Provides direct compatibility with 3.3 V LVTTL memory interfaces as specified by the device.
  • PC133 timing support: 133 MHz clock frequency and defined access time (65 ns) enable predictable timing behavior for designs targeting PC133 specifications.
  • Compact TSOP(II) package: Delivered in a 54‑pin TSOP(II) footprint (0.400" / 10.16 mm width) for board‑level integration where that package is required.
  • Commercial temperature rating: Rated 0 °C to 70 °C for applications operating within standard commercial ambient ranges.
  • Defined refresh behavior: 8K/64 ms refresh requirement is specified in the product documentation for system memory maintenance planning.
  • Wide supply voltage tolerance: Operates across 3.0 V to 3.6 V, aligning with common 3.3 V memory power rails.

Why Choose IC DRAM 512MBIT LVTTL 54TSOP II?

This Samsung Semiconductor SDRAM device offers a straightforward board‑level DRAM option when a 512 Mbit density, LVTTL interface, and 54‑pin TSOP(II) package are required. Its documented electrical and timing parameters — including 133 MHz clocking, 65 ns access time, 3.0–3.6 V supply range, and commercial temperature rating — enable predictable integration into systems that match those specifications.

Use this part in designs that require a 128M × 4 SDRAM organization with 4 banks and 8K/64 ms refresh behavior. The combination of package, interface, and timing data in the datasheet supports clear BOM selection and board‑level implementation for engineers specifying compatible memory modules.

If you need pricing, availability, or a formal quote for the IC DRAM 512MBIT LVTTL 54TSOP II, please request a quote or submit an inquiry for further assistance.

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