IS46R16320D-6TLA2-TR

The IS46R16320D-6TLA2-TR is a 512Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 66‑TSOP II package. It implements double-data-rate architecture with on‑die DLL and data strobe (DQS) support to enable high‑speed, edge‑aligned data transfers.

Engineered for systems that require a compact, low‑voltage DDR memory solution, the device offers configurable burst lengths and CAS latencies, SSTL_2 compatible I/O, and a wide operating temperature range for demanding board‑level memory subsystems.

Key Features

• Memory Core  512 Mbit DDR SDRAM organized as 32M × 16 with four internal banks for concurrent operation and burst read/write access.
• Double‑Data‑Rate Architecture  Two data transfers per clock cycle with bidirectional data strobe (DQS) transmitted/received with data; DQS is edge‑aligned for READs and center‑aligned for WRITEs.
• Timing and Burst Options  Programmable CAS latency options (2, 2.5 and 3) and burst length options of 2, 4 and 8 with sequential and interleave burst types.
• Clocking and DLL  Differential clock inputs (CK and /CK) and an internal DLL to align DQ/DQS transitions with clock transitions; commands registered on positive CK edges.
• I/O and Data Integrity  SSTL_2 compatible I/O, data mask (DM) that masks write data on both edges of the data strobe, and support for auto refresh and self refresh modes.
• Performance  Device speed grade supports clock frequencies up to 166 MHz (–6 grade) with an access time of 700 ps and a write cycle time (word page) of 15 ns.
• Power  Low‑voltage operation with supply range of 2.3 V to 2.7 V (VDD and VDDQ variants specified in datasheet).
• Package and Temperature  Supplied in a 66‑pin TSOP‑II package (0.400", 10.16 mm width) with an operating temperature range of −40°C to +105°C (TA).

Typical Applications

• Memory subsystems  For board‑level designs requiring a 512 Mbit DDR SDRAM with parallel interface and SSTL_2 I/O.
• High‑speed buffering  For designs that need double‑data‑rate transfers and programmable burst/CAS timing.
• Industrial temperature systems  Where a wide operating temperature range (−40°C to +105°C TA) and compact TSOP‑II package are required.

Unique Advantages

• Double‑data‑rate throughput: Two data transfers per clock cycle increase effective memory bandwidth without changing clock rate.
• Flexible timing configuration: Programmable CAS latencies (2, 2.5, 3) and selectable burst lengths (2/4/8) allow tuning for system timing and performance.
• SSTL_2 compatible I/O and differential clocking: Supports standard SSTL_2 signaling and differential CK inputs for robust interface timing.
• Compact board footprint: 66‑TSOP II package provides a space‑efficient 10.16 mm width option for dense PCB layouts.
• Low‑voltage operation: 2.3 V to 2.7 V supply range supports lower power designs while matching DDR voltage domains.
• Operational resilience: Four internal banks, auto/self refresh, and DM write masking support continuous operation and data integrity during refresh cycles.

Why Choose IS46R16320D-6TLA2-TR?

The IS46R16320D-6TLA2-TR provides a compact, configurable 512Mbit DDR SDRAM solution with DDR architecture, SSTL_2 I/O, and programmable timing options that suit a range of board‑level memory requirements. Its combination of double‑data‑rate transfers, internal DLL and DQS support delivers predictable timing for high‑speed data paths.

This device is well suited to designs that need a low‑voltage, parallel DDR memory in a TSOP‑II package with a wide operating temperature range. The configurable burst and latency options offer designers control over performance tradeoffs while on‑die features like refresh modes and data masking aid system reliability.

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