IS46R16160F-6TLA1

The IS46R16160F-6TLA1 is a 256 Mbit parallel DRAM device implemented as SDRAM - DDR with a 16M × 16 memory organization. It provides volatile system memory in a 66‑pin TSOP II package for designs that require moderate-density, parallel-access DRAM.

Key electrical and timing parameters include a clock frequency of 166 MHz, an access time of 700 ps, a write cycle time (word/page) of 15 ns, and an operating supply range of 2.3 V to 2.7 V. The device is specified for an ambient temperature range of −40 °C to 85 °C and is available in a 66‑TSSOP (0.400", 10.16 mm width) package.

Key Features

• Memory Architecture 256 Mbit DRAM organized as 16M × 16 provides parallel data paths for system memory applications.
• DDR SDRAM Technology SDRAM - DDR architecture enabling double data-rate operation with a specified clock frequency of 166 MHz.
• Performance & Timing Access time of 700 ps and a write cycle time (word/page) of 15 ns support predictable memory access patterns.
• Power Supply Operates from a 2.3 V to 2.7 V supply window, allowing compatibility with low-voltage system rails.
• Package Supplied in a 66‑TSOP II / 66‑TSSOP (0.400", 10.16 mm width) package for compact board-level integration.
• Temperature Range Specified for operation from −40 °C to 85 °C (TA), suitable for a wide range of ambient conditions.

Typical Applications

• Embedded Memory for Industrial Systems Use as volatile DDR SDRAM where a 256 Mbit, 16M × 16 organization and parallel interface are required.
• Consumer and Communication Devices Provides system memory in devices that accept a 66‑pin TSOP II footprint and 2.3 V–2.7 V supply.
• Memory Expansion Modules Suitable for module implementations that leverage parallel DRAM chips in compact TSOP II packaging.

Unique Advantages

• Defined DDR Performance: 166 MHz clock frequency and 700 ps access time provide measurable timing characteristics for system design.
• Compact Package: 66‑TSOP II / 66‑TSSOP (0.400", 10.16 mm) package supports space-constrained board layouts.
• Low-Voltage Operation: 2.3 V–2.7 V supply range enables integration with low-voltage system rails and power domains.
• Industrial Temperature Support: −40 °C to 85 °C operating range accommodates a broad set of ambient environments.
• Parallel Interface: 16M × 16 organization and parallel memory interface simplify memory mapping in systems designed for parallel DRAM.

Why Choose IS46R16160F-6TLA1?

The IS46R16160F-6TLA1 positions itself as a straightforward 256 Mbit DDR SDRAM option for designs needing a parallel-access memory in a compact TSOP II package. Its documented timing (700 ps access, 15 ns write cycle) and 166 MHz clock frequency allow designers to plan predictable memory performance while the 2.3 V–2.7 V supply and −40 °C to 85 °C operating range provide flexibility across many system environments.

This device is suited for engineers and procurement teams building systems that require moderate-density volatile memory with defined electrical and package characteristics, offering clear specifications for integration and long-term design planning.

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