KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V

Memory KGD
Part Description

SLC(x1, x2, x4) Internal ECC, 1.8V/3V

Quantity 745 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologyDDR SDRAM
Memory SizeN/AAccess TimeN/AGradeKnown Good Die
Clock FrequencyN/AVoltage2.5VMemory TypeNon-Volatile
Operating TemperatureN/AWrite Cycle Time Word PageN/APackagingN/A
Mounting MethodN/AMemory InterfaceParallelMemory Organization1G x 8
Moisture Sensitivity Level1RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V – SLC(x1, x2, x4) Internal ECC, 1.8V/3V

The KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V from ESMT is presented as a known-good-die memory device in the ESMT SPI NAND series. Product data lists it with a Non-Volatile memory type, 1G × 8 memory organization and a Parallel memory interface, with internal ECC indicated in the part name.

Specifications include a listed VoltageSupply of 2.5V and RoHS compliance. The part is identified by ESMT as part of their known-good-die offering for die-level integration and assemblies.

Key Features

  • Memory Type & Organization Non-Volatile memory organized as 1G × 8, providing a defined capacity and bus-width for system integration.
  • Memory Format & Technology Product data lists MemoryFormat as DRAM and Technology as DDR SDRAM.
  • Interface Parallel memory interface as specified, enabling integration with parallel-memory designs.
  • Internal ECC Internal error-correction capability is indicated in the part name to support on-die data integrity handling.
  • Voltage Supply VoltageSupply is listed as 2.5V in the specifications; the part name also references 1.8V/3V.
  • Grade Known Good Die (KGD) grade for die-level supply and assembly workflows.
  • Compliance RoHS compliant to meet standard environmental substance requirements.

Unique Advantages

  • Known Good Die for die-level assembly: KGD grading simplifies wafer/die-level procurement and integration into multi-die packages.
  • On-die ECC: Internal ECC indicated in the part name supports error correction without requiring external ECC engines.
  • Defined memory organization: 1G × 8 organization provides predictable capacity and addressing for system planning.
  • Parallel interface option: Parallel memory interface supports established board-level memory architectures.
  • Environmental compliance: RoHS compliance supports designs targeting regulatory environmental requirements.

Why Choose KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V?

This ESMT-known-good-die memory part brings together a defined 1G × 8 memory organization, parallel interface, and internal ECC as documented in the product data. It is positioned for designs and assembly flows that require die-level memory components with clear grading and environmental compliance.

Choose this part when your BOM and manufacturing flow require a known-good-die memory offering from ESMT with the specific organization and interface characteristics listed in the product data. Its specification set supports predictable integration and planning for die-level memory deployment.

Request a quote or submit an inquiry to begin procurement of KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V and to receive pricing and availability information.

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