KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V
| Part Description |
SLC(x1, x2, x4) Internal ECC, 1.8V/3V |
|---|---|
| Quantity | 745 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | DDR SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | N/A | Access Time | N/A | Grade | Known Good Die | ||
| Clock Frequency | N/A | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 1G x 8 | ||
| Moisture Sensitivity Level | 1 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V – SLC(x1, x2, x4) Internal ECC, 1.8V/3V
The KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V from ESMT is presented as a known-good-die memory device in the ESMT SPI NAND series. Product data lists it with a Non-Volatile memory type, 1G × 8 memory organization and a Parallel memory interface, with internal ECC indicated in the part name.
Specifications include a listed VoltageSupply of 2.5V and RoHS compliance. The part is identified by ESMT as part of their known-good-die offering for die-level integration and assemblies.
Key Features
- Memory Type & Organization Non-Volatile memory organized as 1G × 8, providing a defined capacity and bus-width for system integration.
- Memory Format & Technology Product data lists MemoryFormat as DRAM and Technology as DDR SDRAM.
- Interface Parallel memory interface as specified, enabling integration with parallel-memory designs.
- Internal ECC Internal error-correction capability is indicated in the part name to support on-die data integrity handling.
- Voltage Supply VoltageSupply is listed as 2.5V in the specifications; the part name also references 1.8V/3V.
- Grade Known Good Die (KGD) grade for die-level supply and assembly workflows.
- Compliance RoHS compliant to meet standard environmental substance requirements.
Unique Advantages
- Known Good Die for die-level assembly: KGD grading simplifies wafer/die-level procurement and integration into multi-die packages.
- On-die ECC: Internal ECC indicated in the part name supports error correction without requiring external ECC engines.
- Defined memory organization: 1G × 8 organization provides predictable capacity and addressing for system planning.
- Parallel interface option: Parallel memory interface supports established board-level memory architectures.
- Environmental compliance: RoHS compliance supports designs targeting regulatory environmental requirements.
Why Choose KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V?
This ESMT-known-good-die memory part brings together a defined 1G × 8 memory organization, parallel interface, and internal ECC as documented in the product data. It is positioned for designs and assembly flows that require die-level memory components with clear grading and environmental compliance.
Choose this part when your BOM and manufacturing flow require a known-good-die memory offering from ESMT with the specific organization and interface characteristics listed in the product data. Its specification set supports predictable integration and planning for die-level memory deployment.
Request a quote or submit an inquiry to begin procurement of KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V and to receive pricing and availability information.
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