KGD-256Mbx16/-512Mbx8-DDR3-1.35V/1.5V
| Part Description |
DDR3 1.35V/1.5V |
|---|---|
| Quantity | 562 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | DDR3 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | N/A | Access Time | N/A | Grade | Known Good Die | ||
| Clock Frequency | N/A | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 256M x 16 / 512M x 8 | ||
| Moisture Sensitivity Level | 1 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of KGD-256Mbx16/-512Mbx8-DDR3-1.35V/1.5V – DDR3 1.35V/1.5V
The KGD-256Mbx16/-512Mbx8-DDR3-1.35V/1.5V from ESMT is a DDR3 SDRAM Known Good Die intended for memory product integration. It is a volatile DRAM device offered in memory organizations of 256M × 16 and 512M × 8 with a parallel memory interface.
This component is positioned for use in designs and assemblies that require die-level DDR3 SDRAM and RoHS-compliant memory components, providing a straightforward memory building block for module and system integrators.
Key Features
- Memory Technology DDR3 SDRAM volatile memory format suitable for standard DRAM integration.
- Memory Organization Available as 256M × 16 or 512M × 8 to support different bus widths and capacity requirements.
- Memory Interface Parallel memory interface compatible with parallel DDR3 controller architectures.
- Voltage Supply Voltage supply specified as 2.5V in product specifications.
- Known Good Die (KGD) Supplied as Known Good Die for die-level assembly and integration workflows.
- Environmental Compliance RoHS compliant to meet common lead-free assembly requirements.
- Manufacturer and Series Manufactured by ESMT and offered as part of the ESMT DDR3 SDRAM KGD series.
Typical Applications
- Die-level memory integration — Use as a Known Good Die for multi-die assemblies, custom memory modules, or package-level integration.
- Memory module development — Appropriate for designers developing DDR3-based modules that require 256M×16 or 512M×8 organizations.
- Embedded system memory — Incorporated into embedded systems and boards that implement a parallel DDR3 interface and require RoHS-compliant DRAM.
Unique Advantages
- Die-level delivery: Supplied as Known Good Die to simplify integration into custom packages and multi-die solutions.
- Flexible organization options: Two memory organizations (256M×16 and 512M×8) to match different bus widths and capacity needs.
- Parallel DDR3 interface: Direct compatibility with parallel DDR3 controller designs for straightforward memory interfacing.
- RoHS compliant: Conforms to lead-free assembly requirements to support compliant manufacturing processes.
- ESMT-backed series: Part of the ESMT DDR3 SDRAM KGD series, aligning with a recognized memory product line.
Why Choose KGD-256Mbx16/-512Mbx8-DDR3-1.35V/1.5V?
This ESMT DDR3 SDRAM Known Good Die provides clear die-level memory options for teams building custom modules, multi-die packages, or embedded boards that require DDR3 memory organizations of 256M×16 or 512M×8. With a parallel interface and RoHS compliance, it serves as a practical choice for integration-focused memory designs.
Choose this part when you need a DDR3 SDRAM die from a known series and supplier, with the die-level form factor and organization options to support scalable memory assembly and production workflows.
Request a quote or submit an inquiry for pricing and availability to begin integrating KGD-256Mbx16/-512Mbx8-DDR3-1.35V/1.5V into your designs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A