KGD-1Mbx16-SDRAM-1.8V/2.5V/3.3V

SDRAM KGD
Part Description

1M × 16 SDRAM Known Good Die

Quantity 479 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologySDRAM
Memory SizeN/AAccess TimeN/AGradeKnown Good Die
Clock FrequencyN/AVoltage2.5VMemory TypeVolatile
Operating TemperatureN/AWrite Cycle Time Word PageN/APackagingN/A
Mounting MethodN/AMemory InterfaceParallelMemory Organization1M x 16
Moisture Sensitivity Level1RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.02

Overview of KGD-1Mbx16-SDRAM-1.8V/2.5V/3.3V – 1M × 16 SDRAM Known Good Die

The KGD-1Mbx16-SDRAM-1.8V/2.5V/3.3V from ESMT is a volatile DRAM device using SDRAM technology, organized as 1M × 16 with a parallel memory interface. It is offered as a Known Good Die (KGD) within the ESMT SDRAM series, intended for die-level integration in memory subsystems.

The part name indicates supply voltage options of 1.8V, 2.5V and 3.3V and the product specifications list a 2.5V supply value. The device is RoHS compliant, supporting environmentally regulated designs.

Key Features

  • Memory Technology  SDRAM volatile DRAM technology with a 1M × 16 memory organization for defined density planning.
  • Interface  Parallel memory interface compatible with standard SDRAM integration approaches.
  • Voltage / Power  Part name indicates 1.8V / 2.5V / 3.3V supply options; specification lists a 2.5V supply value.
  • Grade  Known Good Die (KGD) grade for die-level reliability and predictable assembly characteristics.
  • Compliance  RoHS compliant to meet environmental material requirements.
  • Manufacturer & Series  Produced by ESMT as part of the ESMT SDRAM KGD-1Mbx16-SDRAM-1.8V/2.5V/3.3V series for consistent sourcing.

Unique Advantages

  • Known Good Die quality: Provides die-level test assurance to support wafer/die integration and reduce downstream testing uncertainty.
  • Clear voltage indication: Supply voltage options shown in the part name give designers visibility into supported system domains.
  • Standard SDRAM architecture: Parallel SDRAM interface and SDRAM technology match conventional memory design patterns for straightforward integration.
  • Defined memory density: 1M × 16 organization offers a specific, predictable memory footprint for mapping and BOM planning.
  • RoHS compliance: Helps meet regulatory material requirements for environmentally conscious product lines.

Why Choose KGD-1Mbx16-SDRAM-1.8V/2.5V/3.3V?

KGD-1Mbx16-SDRAM-1.8V/2.5V/3.3V is positioned for designs that require a tested SDRAM die with a known memory organization and a parallel interface. Its Known Good Die grading and inclusion in the ESMT SDRAM series make it suitable for die-level assembly workflows and procurement where predictable die quality is important.

With explicit supply-voltage indications in the part name and RoHS compliance, this ESMT SDRAM part supports straightforward integration into projects that need defined memory density and adherence to environmental material standards.

Request a quote or submit a procurement inquiry for KGD-1Mbx16-SDRAM-1.8V/2.5V/3.3V through your preferred purchasing channel to discuss availability and ordering details.

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