KGD-8Mbx8-PSRAM,-1.8V

PSRAM KGD
Part Description

PSRAM, 1.8V

Quantity 1,747 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatSRAMTechnologyPSRAM
Memory SizeN/AAccess TimeN/AGradeKnown Good Die
Clock FrequencyN/AVoltage2.5VMemory TypeVolatile
Operating TemperatureN/AWrite Cycle Time Word PageN/APackagingN/A
Mounting MethodN/AMemory InterfaceParallelMemory Organization8M x 8
Moisture Sensitivity Level1RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of KGD-8Mbx8-PSRAM,-1.8V – PSRAM, 1.8V

The KGD-8Mbx8-PSRAM,-1.8V from ESMT is a volatile parallel SRAM implemented in PSRAM technology with an 8M × 8 memory organization. It is provided as a Known Good Die (KGD) and is RoHS compliant, targeted at designs that require a parallel-access volatile memory element.

Key identifiers for this part include its PSRAM architecture, parallel memory interface and a specified supply voltage of 2.5V. The part is offered by ESMT as part of the ESMT PSRAM KGD-8Mbx8-PSRAM,-1.8V series.

Key Features

  • Memory Type  Volatile memory implemented as SRAM using PSRAM technology for conventional volatile data storage.
  • Memory Organization  8M × 8 organization providing an eight-million-by-eight memory map for byte-oriented access.
  • Interface  Parallel memory interface suitable for systems that require parallel data transfers.
  • Voltage  Voltage supply specified as 2.5V.
  • Grade  Known Good Die (KGD) delivery format for wafer- or die-level assembly workflows.
  • Environmental Compliance  RoHS compliant to meet hazardous-substance regulations for electronic components.

Typical Applications

  • Embedded systems  Used as a parallel-access volatile memory element where byte-oriented storage and retrieval are required.
  • Memory modules  Suitable for inclusion in designs that assemble die-level PSRAM to form custom memory stacks or modules.
  • Temporary data buffering  Acts as volatile storage for buffering intermediate data in systems that support parallel memory interfacing.

Unique Advantages

  • Known Good Die format: Facilitates die-level assembly and reduces risk in downstream packaging and board-level integration.
  • Parallel interface: Enables straightforward integration into systems designed around parallel memory buses.
  • Clear memory organization: 8M × 8 layout simplifies capacity planning and memory mapping in application firmware and hardware design.
  • Manufacturer backing: Produced by ESMT as part of their PSRAM series, providing traceability to a known memory supplier.
  • RoHS compliance: Simplifies regulatory compliance for assemblies destined for regions with hazardous-substance regulations.

Why Choose KGD-8Mbx8-PSRAM,-1.8V?

The KGD-8Mbx8-PSRAM,-1.8V positions itself as a straightforward PSRAM-based volatile memory die with an 8M × 8 organization and parallel interface—delivered as Known Good Die for die-level integration. Its defined supply voltage (2.5V) and RoHS compliance make it suitable for designs that require a traceable, regulation-compliant memory die from a recognized manufacturer.

This part is appropriate for engineers and procurement teams planning die-level assembly or integrating parallel volatile memory into systems where the specified memory organization and delivery grade align with project requirements.

Request a quote or submit an inquiry to obtain pricing, availability and ordering information for KGD-8Mbx8-PSRAM,-1.8V.

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