KGD-8Mbx8-PSRAM,-1.8V
| Part Description |
PSRAM, 1.8V |
|---|---|
| Quantity | 1,747 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | N/A | Memory Format | SRAM | Technology | PSRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | N/A | Access Time | N/A | Grade | Known Good Die | ||
| Clock Frequency | N/A | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 8M x 8 | ||
| Moisture Sensitivity Level | 1 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of KGD-8Mbx8-PSRAM,-1.8V – PSRAM, 1.8V
The KGD-8Mbx8-PSRAM,-1.8V from ESMT is a volatile parallel SRAM implemented in PSRAM technology with an 8M × 8 memory organization. It is provided as a Known Good Die (KGD) and is RoHS compliant, targeted at designs that require a parallel-access volatile memory element.
Key identifiers for this part include its PSRAM architecture, parallel memory interface and a specified supply voltage of 2.5V. The part is offered by ESMT as part of the ESMT PSRAM KGD-8Mbx8-PSRAM,-1.8V series.
Key Features
- Memory Type Volatile memory implemented as SRAM using PSRAM technology for conventional volatile data storage.
- Memory Organization 8M × 8 organization providing an eight-million-by-eight memory map for byte-oriented access.
- Interface Parallel memory interface suitable for systems that require parallel data transfers.
- Voltage Voltage supply specified as 2.5V.
- Grade Known Good Die (KGD) delivery format for wafer- or die-level assembly workflows.
- Environmental Compliance RoHS compliant to meet hazardous-substance regulations for electronic components.
Typical Applications
- Embedded systems Used as a parallel-access volatile memory element where byte-oriented storage and retrieval are required.
- Memory modules Suitable for inclusion in designs that assemble die-level PSRAM to form custom memory stacks or modules.
- Temporary data buffering Acts as volatile storage for buffering intermediate data in systems that support parallel memory interfacing.
Unique Advantages
- Known Good Die format: Facilitates die-level assembly and reduces risk in downstream packaging and board-level integration.
- Parallel interface: Enables straightforward integration into systems designed around parallel memory buses.
- Clear memory organization: 8M × 8 layout simplifies capacity planning and memory mapping in application firmware and hardware design.
- Manufacturer backing: Produced by ESMT as part of their PSRAM series, providing traceability to a known memory supplier.
- RoHS compliance: Simplifies regulatory compliance for assemblies destined for regions with hazardous-substance regulations.
Why Choose KGD-8Mbx8-PSRAM,-1.8V?
The KGD-8Mbx8-PSRAM,-1.8V positions itself as a straightforward PSRAM-based volatile memory die with an 8M × 8 organization and parallel interface—delivered as Known Good Die for die-level integration. Its defined supply voltage (2.5V) and RoHS compliance make it suitable for designs that require a traceable, regulation-compliant memory die from a recognized manufacturer.
This part is appropriate for engineers and procurement teams planning die-level assembly or integrating parallel volatile memory into systems where the specified memory organization and delivery grade align with project requirements.
Request a quote or submit an inquiry to obtain pricing, availability and ordering information for KGD-8Mbx8-PSRAM,-1.8V.
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