KGD-8Mbx8-PSRAM,-2.7~3.6V

PSRAM KGD
Part Description

PSRAM, 2.7~3.6V

Quantity 344 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatSRAMTechnologyPSRAM
Memory SizeN/AAccess TimeN/AGradeKnown Good Die
Clock FrequencyN/AVoltage2.5VMemory TypeVolatile
Operating TemperatureN/AWrite Cycle Time Word PageN/APackagingN/A
Mounting MethodN/AMemory InterfaceParallelMemory Organization8M x 8
Moisture Sensitivity Level1RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of KGD-8Mbx8-PSRAM,-2.7~3.6V – PSRAM, 2.7~3.6V

The KGD-8Mbx8-PSRAM,-2.7~3.6V from ESMT is a volatile PSRAM device organized as 8M × 8 bits. It implements SRAM-format memory with a parallel interface and is offered in a Known Good Die grade for integration where die-level components are required.

Designed for use in systems that require volatile SRAM storage, this PSRAM provides a straightforward parallel memory interface and RoHS-compliant construction for regulatory alignment.

Key Features

  • Memory Type  Volatile memory implemented in SRAM format using PSRAM technology, suitable for temporary data storage.
  • Memory Organization  8M × 8 organization providing an 8-megabit by 8-bit structure for addressing and data layout.
  • Interface  Parallel memory interface for direct bus connectivity with compatible system architectures.
  • Voltage  Voltage supply listed as 2.5V in the product specifications.
  • Grade  Known Good Die (KGD) grade, provided for die-level assembly and integration workflows.
  • Environmental  RoHS compliant, meeting standard restriction of hazardous substances requirements.

Typical Applications

  • Volatile data storage  Use as temporary memory for systems that require SRAM-format PSRAM for buffering and working data.
  • Die-level integration  Suitable for designs that incorporate Known Good Die parts into multi-die packages or custom assemblies.
  • Parallel bus systems  Integration into architectures that use a parallel memory interface for direct system bus access.

Unique Advantages

  • PSRAM technology: Combines SRAM-format behavior with PSRAM implementation as specified, offering volatile memory characteristics.
  • Compact address organization: 8M × 8 organization provides a clear capacity and data width for system memory planning.
  • Parallel interface simplicity: Parallel connectivity supports straightforward integration into compatible memory bus designs.
  • Known Good Die grade: Delivered as KGD to support die-level assembly and improve yield predictability in multi-die solutions.
  • RoHS compliant: Conforms to RoHS environmental requirements for regulated markets.

Why Choose KGD-8Mbx8-PSRAM,-2.7~3.6V?

The KGD-8Mbx8-PSRAM,-2.7~3.6V is positioned for designs that need volatile, SRAM-format memory in a parallel-interface configuration and prefer die-level components. Its 8M × 8 organization and Known Good Die grade make it a practical choice for engineering teams assembling custom multi-die modules or integrating die-level memory.

Backed by ESMT's PSRAM series characteristics and RoHS compliance, this part is suitable for projects focused on predictable die-level integration and adherence to environmental restrictions.

Request a quote or submit an inquiry to receive pricing and availability for KGD-8Mbx8-PSRAM,-2.7~3.6V and to discuss volume options and procurement timelines.

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