KGD-8Mbx8-PSRAM,-2.7~3.6V
| Part Description |
PSRAM, 2.7~3.6V |
|---|---|
| Quantity | 344 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | N/A | Memory Format | SRAM | Technology | PSRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | N/A | Access Time | N/A | Grade | Known Good Die | ||
| Clock Frequency | N/A | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 8M x 8 | ||
| Moisture Sensitivity Level | 1 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of KGD-8Mbx8-PSRAM,-2.7~3.6V – PSRAM, 2.7~3.6V
The KGD-8Mbx8-PSRAM,-2.7~3.6V from ESMT is a volatile PSRAM device organized as 8M × 8 bits. It implements SRAM-format memory with a parallel interface and is offered in a Known Good Die grade for integration where die-level components are required.
Designed for use in systems that require volatile SRAM storage, this PSRAM provides a straightforward parallel memory interface and RoHS-compliant construction for regulatory alignment.
Key Features
- Memory Type Volatile memory implemented in SRAM format using PSRAM technology, suitable for temporary data storage.
- Memory Organization 8M × 8 organization providing an 8-megabit by 8-bit structure for addressing and data layout.
- Interface Parallel memory interface for direct bus connectivity with compatible system architectures.
- Voltage Voltage supply listed as 2.5V in the product specifications.
- Grade Known Good Die (KGD) grade, provided for die-level assembly and integration workflows.
- Environmental RoHS compliant, meeting standard restriction of hazardous substances requirements.
Typical Applications
- Volatile data storage Use as temporary memory for systems that require SRAM-format PSRAM for buffering and working data.
- Die-level integration Suitable for designs that incorporate Known Good Die parts into multi-die packages or custom assemblies.
- Parallel bus systems Integration into architectures that use a parallel memory interface for direct system bus access.
Unique Advantages
- PSRAM technology: Combines SRAM-format behavior with PSRAM implementation as specified, offering volatile memory characteristics.
- Compact address organization: 8M × 8 organization provides a clear capacity and data width for system memory planning.
- Parallel interface simplicity: Parallel connectivity supports straightforward integration into compatible memory bus designs.
- Known Good Die grade: Delivered as KGD to support die-level assembly and improve yield predictability in multi-die solutions.
- RoHS compliant: Conforms to RoHS environmental requirements for regulated markets.
Why Choose KGD-8Mbx8-PSRAM,-2.7~3.6V?
The KGD-8Mbx8-PSRAM,-2.7~3.6V is positioned for designs that need volatile, SRAM-format memory in a parallel-interface configuration and prefer die-level components. Its 8M × 8 organization and Known Good Die grade make it a practical choice for engineering teams assembling custom multi-die modules or integrating die-level memory.
Backed by ESMT's PSRAM series characteristics and RoHS compliance, this part is suitable for projects focused on predictable die-level integration and adherence to environmental restrictions.
Request a quote or submit an inquiry to receive pricing and availability for KGD-8Mbx8-PSRAM,-2.7~3.6V and to discuss volume options and procurement timelines.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A