M12L128168A-5TG2S
| Part Description |
SDRAM 128Mbit 2M×16 ×4 Banks, 3.3V, 200MHz, 54‑TSOP II |
|---|---|
| Quantity | 267 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 54-TSOPII | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 4.5 ns | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 3.0V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 10 ns | Packaging | 54-TSOP II | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 2M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M12L128168A-5TG2S – SDRAM 128Mbit 2M×16 ×4 Banks, 3.3V, 200MHz, 54‑TSOP II
The M12L128168A-5TG2S from ESMT is a synchronous DRAM device providing 134,217,728 bits (134.2 Mbit) of volatile memory organized as 4 × 2,097,152 words by 16 bits. It implements a four‑bank SDRAM architecture with a parallel interface and synchronous clocked I/O for cycle‑accurate data transfers.
Designed for high‑bandwidth, high‑performance memory system applications, this JEDEC‑qualified, commercial‑grade SDRAM supports programmable burst lengths and latencies to match a range of system timing requirements while operating from a standard 3.3 V supply.
Key Features
- Core Architecture Four banks operation with 2M × 16 organization (4 × 2,097,152 × 16) for block‑oriented memory access.
- Synchronous Operation All inputs are sampled on the positive edge of the system clock for precise timing and predictable cycle control.
- Performance Supports up to 200 MHz operation with typical access time of 4.5 ns and a write cycle time (word/page) of 10 ns, enabling high throughput data transfers.
- Programmable Timing and Burst CAS Latency selectable (2 or 3) and programmable burst lengths (1, 2, 4, 8, and full page) with sequential and interleaved burst types to optimize system performance.
- Standardized Interface LVTTL‑compatible multiplexed address pins, parallel DQ bus (DQ0–DQ15), bank address pins (BA0, BA1), and control signals (CLK, RAS, CAS, WE, CS, CKE, L(U)DQM) for straightforward integration into JEDEC SDRAM designs.
- Refresh and Power Control Auto and self‑refresh support with a 64 ms refresh period (4K cycles) plus clock enable (CKE) for power‑management control.
- Power and Voltage JEDEC standard 3.3 V supply with operating voltage range 3.0 V to 3.6 V and separate VDDQ/VSSQ for output buffer power isolation.
- Package and Grade Supplied in a 54‑pin TSOP II (54‑TSOP II) surface‑mount package; commercial operating temperature 0 °C to 70 °C. RoHS compliant and Pb‑free.
Typical Applications
- High‑Bandwidth Memory Subsystems Used where predictable synchronous transfers and programmable burst behavior are required for sustained data throughput.
- Embedded and Commercial Electronics Commercial‑grade SDRAM for embedded designs that require JEDEC‑compliant 3.3 V SDRAM with compact TSOP II packaging.
- Memory Expansion on Boards and Modules Suitable for board‑level memory expansion where a 16‑bit data path and 134.2 Mbit capacity meet system buffering and working memory needs.
Unique Advantages
- Flexible Performance Tuning: Selectable CAS latencies and multiple burst lengths let designers tune latency and throughput to match system timing.
- Synchronous, Deterministic I/O: Positive‑edge clock sampling and four‑bank architecture provide predictable cycle control for high‑rate memory accesses.
- Industry Standard Power and Signaling: JEDEC 3.3 V supply and LVTTL‑compatible interface simplify integration into existing SDRAM designs and platforms.
- Power Management Features: Auto/self‑refresh and CKE support enable low‑activity power management without sacrificing refresh integrity (64 ms/4K cycles).
- Compact, Assembly‑Ready Package: 54‑pin TSOP II surface‑mount package offers a small board footprint for space‑constrained designs.
- Regulatory Compliance: RoHS‑compliant, Pb‑free construction supports environmental and manufacturing compliance requirements.
Why Choose M12L128168A-5TG2S?
The M12L128168A-5TG2S delivers JEDEC‑compliant, synchronous DRAM performance in a compact TSOP II package, balancing capacity (134.2 Mbit), high transfer rates (up to 200 MHz), and configurable timing for diverse high‑bandwidth applications. Its standard 3.3 V operation, LVTTL‑compatible signaling and built‑in refresh and power control features make it straightforward to integrate into commercial memory subsystems.
This device is suited for engineers and procurement teams specifying reliable SDRAM for commercial designs that require predictable synchronous behavior, programmable performance tuning, and a small board footprint backed by ESMT’s product definitions and JEDEC compliance.
Request a quote or submit an inquiry to check availability, pricing, and lead times for the M12L128168A-5TG2S.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A